1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm, is provided with contacts as required for Hall - Effect measurements and is placed in a 1 x 101T magnetic field. When a potential of 15.0 V is applied along the sample, a current of 0.75 mA is observed. If a Hall voltage of - 5.48 mV develops, determine the majority carrier concentration in m3. b) Are the majority carriers electrons or holes? c) Is this semiconductor n-type or p-type? d) Has the sample been doped with donors or acceptors? e) Determine Ec- EF, in eV. f) Use the semiconductor equation calculate the minority carrier concentration in this sample. g) What is the probability of an electron occupying an energy state at the bottom of the conduction band in this sample?

Delmar's Standard Textbook Of Electricity
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ISBN:9781337900348
Author:Stephen L. Herman
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Chapter1: Atomic Structure
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Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm, is
provided with contacts as required for Hall - Effect measurements and is placed in a 1 x 10-1 T magnetic
field. When a potential of 15.0 V is applied along the sample, a current of 0.75 mA is observed. If a Hall
voltage of - 5.48 mV develops, determine the majority carrier concentration in m3.
b) Are the majority carriers electrons or holes?
c) Is this semiconductor n-type or p-type?
d) Has the sample been doped with donors or acceptors?
e) Determine Ec-EF, in eV.
f) Use the semiconductor equation calculate the minority carrier concentration in this sample.
g) What is the probability of an electron occupying an energy state at the bottom of the conduction band
in this sample?
h) Sketch the band diagram for this sample; label the conduction and valence bands, the Fermi level at
300 K, Eg, Ec, Ev, and state the numerical values for Eg, Ec – Ef and Ef -Ev.
Transcribed Image Text:1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm, is provided with contacts as required for Hall - Effect measurements and is placed in a 1 x 10-1 T magnetic field. When a potential of 15.0 V is applied along the sample, a current of 0.75 mA is observed. If a Hall voltage of - 5.48 mV develops, determine the majority carrier concentration in m3. b) Are the majority carriers electrons or holes? c) Is this semiconductor n-type or p-type? d) Has the sample been doped with donors or acceptors? e) Determine Ec-EF, in eV. f) Use the semiconductor equation calculate the minority carrier concentration in this sample. g) What is the probability of an electron occupying an energy state at the bottom of the conduction band in this sample? h) Sketch the band diagram for this sample; label the conduction and valence bands, the Fermi level at 300 K, Eg, Ec, Ev, and state the numerical values for Eg, Ec – Ef and Ef -Ev.
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