An N-type silicon sample has a uniform density Nd = 10^17cm^–3 of arsenic, and a P-type sample has Na = 10^15cm^–3. A third sample has both impurities present at the same time. (a) Find the equilibrium minority carrier concentrations at 300 K in each sample. (b) Find the conductivity of each sample at 300 K. (c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).

An N-type silicon sample has a uniform density Nd = 10^17cm^–3 of arsenic, and a P-type sample has Na = 10^15cm^–3. A third sample has both impurities present at the same time. (a) Find the equilibrium minority carrier concentrations at 300 K in each sample. (b) Find the conductivity of each sample at 300 K. (c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter2: Fundamentals

Section: Chapter Questions

Problem 2.1P: Given the complex numbers A1=630 and A2=4+j5, (a) convert A1 to rectangular form: (b) convert A2 to...

See similar textbooks