Assume the NMOS and PMOS transistors in a CMOS inverter have kn'= 100 µA/V², Vthn = 0.7 V, kp'= 50 µA/V², Vthp = -0.7 V. The power supply voltage for the circuit is VDD = 2.5 V. (a) If W/L=2 for both NMOS and PMOS, calculate the input voltage Vin when the transition occurs (the "C" point on the inverter input/output voltage transfer curve where both NMOS and PMOS transistors are in saturation). (b) In order to achieve an inverter whose transition occurs at precisely Vin = VDD/2 = 1.25 V, how should you choose the W/L for the NMOS and PMOS?

Assume the NMOS and PMOS transistors in a CMOS inverter have kn'= 100 µA/V², Vthn = 0.7 V, kp'= 50 µA/V², Vthp = -0.7 V. The power supply voltage for the circuit is VDD = 2.5 V. (a) If W/L=2 for both NMOS and PMOS, calculate the input voltage Vin when the transition occurs (the "C" point on the inverter input/output voltage transfer curve where both NMOS and PMOS transistors are in saturation). (b) In order to achieve an inverter whose transition occurs at precisely Vin = VDD/2 = 1.25 V, how should you choose the W/L for the NMOS and PMOS?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Problem Three A particular digital inverter is operated with a supply voltage of 1.2V. The small signal voltage gain is desired to be 50 V/V. Unlike an ideal inverter Vm is desired to be 0.4 of the supply voltage. Assume the following parameter values: VOL = 0V and VoH = VDD a) Determine the corresponding values for VL and VH. b) Determine the noise margins of the inverter. c) Calculate the large signal gain defined as: Ay = (VoH– VoL) / (VH- VIL). %3D
Problem 3 Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 350 nanometers. For NMOS: tox=10nm, Vm=0.25V, un=560cm²/vsec, W=700nm, L=350nm For PMOS: tox=10nm, Vtp=-0.35V, up=240cm²/vsec, W=700nm, L=350nm Compute the resistance R₁ for NMOS if the power supply voltage (Vad) is 1.25 volts.
Q1) The square-wave inverter has a de input of 150 V and supplies a series RL load with R=20 Q and L = 40 mH. (a) Determine an expression for steady state load current. (b) Sketch the load current and indicate the time intervals when each switch component (Q1, D1;... Q4, D4) is conducting. (c) Determine the peak current in each switch component. (d) What is the maximum voltage across each switch?
Redesign the resistive load inverter for operation at a power level of 0.30 mW withVDD = 3.3 V. Assume VT O = 0.7 V. Keep theother design parameters the same. What is the newsize of MS and the value of R? (b) What are thevalues for NMH and NML ?
For an inverter with VIL = 0.46 V, VIH = 0.77 V, VOL= 0.08 V, and VOH = 1.2 V, find out the maximum value for the noise voltage in presence of which the inverter can work properly. Ans: 0.38 V.
1) a) Design a depletion-mode load inverter shown in the below figure with Vpp = 3.3V, P = 0.25mW, VL = 0.2V, VTo = 0.6V for the switching transistor, VTo = -3V for the depletion- mode load, y = 0.5VV, and 2șF = 0.6V. b) What are the vlues of NML and NMµ? ML 0a 어 Ms
1. For the enhancement nMOSFET inverter circuit, Vt = .84 V, ip = 1.6 mA, vgs = 1.3 V, VDs = 5 V. VDD RD UIN iD VOUT (a) Find k. (b) Specify an appropriate value of VDD and R. Choose the nearest standard value of resistor. (c) What is the lowest possible value of VDD? (d) Show that the transistor is in saturation mode. (e) How much power is being dissipated by the entire circuit?
In the single-phase, full-bridge inverter controlled by the single PWM control, the frequency of the reference signal determines:
(a) Calculate the voltage at which vO = vI for a CMOS inverter with Kn = Kp. (Hint: Alwaysremember that iDN = iDP.) Use VDD = 2.5 V, VTN = 0.6V, VTP = −0.6V. (b) What is the currentIDD from the power supply for vO = VI if (W/L)N = 2/1? (c) Repeat the calculation in (a)for a CMOS inverter with Kn = 2.5Kp. (d) What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1?
(a)VDD = 1.8 V, VTN = 0.45 V and VTP = −0.45 V. .Calculate the voltage at which vO = vI for a CMOS inverter with Kn = Kp. (b)VDD = 2.5 V, VTN = 0.75 V and VTP = −0.65 V. What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1? (c)VDD = 2.5 V, VTN = 0.65 V and VTP = −0.75 V.What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1?
Note: Use Kn'= 100 µA/V?, Kp'= 40 µA/V?, VIN= 0.6 V, and VIP =-0.6 V unless otherwise indicated. 1) The static voltage transfer characteristic for a practical CMOS inverter is given in the below figure. Estimate the values of VH , VL , VOH, VOL, VIH, VIL, NMH, and NML . vo 4.0 V 2.0 V OV O V 1.0 V 2.0 V 3.0 V 4.0 V
Q1.The single phase full bridge inverter has a resistive load of R= 402 and the de input voltage is Vs-80V. Determine: (a) the rms output voltage at the fundamental frequency1.(b) the output power Po. (c) the average and peak currents of each transistor, (d) the peak reverse blocking voltage of each transistor, (e) the THD, (f) the DF, and (g) The HF and DF of the LOH.