sample of N-type semiconductor has electron density of 6.25 × 1018/cm3 at DOK. if the intrinsic concentration of the charge carriers and the sample is
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- Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.A non-pure semiconductor has a gap of energy equal to 1ev. The density of the holes for it is equal to 10 m at a 18 -3 temperature of 300k and the density of 14 -3 the electrons is equal to 10 m. Find the location of the Fermi at a temperature of 500k
- Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductorCalculate the hole and electron densities in a N-type germanium semiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2 /Vs and 1800 cm2 /Vs respectively and ni= 2.5 × 1013/cm3
- Calculate the voltage and current of the diode in the figure for each of the diode's models. In each case, determine the voltage across the resistor. Additionally, in each case, determine the diode's power. Assume that Rb is ten ohms.With constant current flowing in the forward direction in a small-signal silicon diode, the voltage across the diode decreases with temperature by about 2 mV/K. Such a diode has a voltage of 0.650 V, with a current of 1 mA at a temperature of 25°C. Find the diode voltage at 1 mA and a temperature of 175°C.Find the effect on the resistance in a semiconductor due to charge carriers.
- The number of free electrons in a doped semiconductor Please choose one: a. More than the number of holes b. Less than the number of holes c. Equals the number of holes D. none of the aboveFind the kinetic energy of electrons in the conduction band of a nondegenerate n-type semiconductor at 300 K.An intrinsic semiconductor has n 2x1016/m3 was doped with 1018 /m³ acceptor impurities. If the mobility of the electrons is 0.13m?/y.s and the mobility of holes is 0.04m2/y.s. determine the conductivity, and what is the percentage ratio of the electrons and holes conductivity?