MOSFET Exploration 2_N-MOSFET DC Biasing and CS Amp Configurations

Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and  Voltage at common collector is +28V,Voltage at Base-emitter junction  is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.

MOSFET Amplifier: 1. Determine the drain-to-source voltage (VDs) if VDD = +1sV and RD = 6202. The MOSFET data sheet gives and Ipss = 12 mA. (Ans: Vps=10.6 V) %3D

QUESTION 4 For an n-channel Junction Field-Effect Transistor (JFET), the gate-source cut-off voltage, VGS(OFF), is -4 V and the drain saturation current, Ipss is 50 mA. The drain current ID, is 12 mA. Determine the gate-to-source voltage, Vos, of the JFET.

What sets an integrated circuit distinct from a transistor, and what are their similarities?

All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....

Exercise 1:-

engineering notation

A circuit responding to temperature is shown in figure 6. Assume the diode equation is given by Ia Ioe(qVa/kT). What is the DC operating point of the circuit at the temperature T. Also determine the small signal output swing Av, due to an incremental change in temperature AT. For this question assume Rį = 0. Heat T+AT V. DD D'B R₁ OV +AV Figure 6: Temperature sensor

5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.

Example 8:-

A cascode circuit is shown in Figure 4 below: v+ Rp R1 CG M2 R2 Cc M1 R3 Rs Cs V- Figure 4 The transistor parameters are Kn1 = Kn2 = 0.8 mA/V² and VTNI = VTN2= 1.2 V. The cascode circuit operates at Ip = 0.4 mA in each transistor. (a) Draw the AC equivalent circuit for the cascode circuit shown in Figure 4 above. (b) Draw the small-signal equivalent circuit for the cascode circuit shown in Figure 4 above. (c) Design the cascode circuit with a voltage gain (Av) of -5.0. wwo s

Pictorially describe the fabrication steps of N-channel E MOSFET. The drawing and steps be in more details

Consider the circuit in Figure 2. The transistor has a parameter B that varies between 50 and 200. You want to know the operation of the circuit and the electrical variables at the end points. Calculate the following for B= 50 and B= 200. a) IE, VE and VB (Analysis in DC). b) The input resistance R." (Small signal analysis). c) The voltage gain VO/Vsing (Small signal analy). This 10 ΚΩ www o Rin 100 ΚΩ +3V +1₁ HH 1 ΚΩ 1₁ 1 ΚΩ

How to calculate the bias resistor of a common emitter amplifier. The design curretn is 0.55mA. Bera is assumed to be 200 and the Vcc = 12V. Note: the bias resistor should be high.

9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.

1. For a certain D-MOSFET, IDSS = 18 mA, and VGS = +10V. Vp =4V. a) Determine ID at VGS =+ 3V. b) Determine ID at VGS = -3V. %3D

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.

Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD

(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).

Just need 1d and 1e answered.

(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics  (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.

a) The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible?

The DC Current Gain of a Transistor is Select one: a. Ratio of Collector Current to Base Current b. Ratio of Base Current to Collector Current c. Ratio of Emitter Current to Collector Current d. Ratio of Base Current to Emitter Current

- Explain the effect of base resistance and collector resistance on the circuit.

Discuss High level modulator: circuit diagram and operation - Collector modulator

Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )

2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V

4 For the transistor shown in below figure, Calculate the value of R; that will just make the transistor work as closed switch. Hence Bpc = 80, VBE = 0.7V, VCE(sat) = 0.2V, Vcc = 12V, R. = 2.7KN. a) Calculate the I, and I.. Vcc RB Rc b) Calculate Rp.

1. From the circuit shown in the figure, the transistor has a  β = 300.  The transistor is a. in saturation region b. in active region c. in cut-off region d. a switch2. Refer to the figure shown, the collector-base voltage of the transistor if β = 140 is  a. 5.28 V b. 5.98 V c. base voltage minus collector voltage d. -5.98 V e. collector-emitter minus emitter-base voltage3. In the circuit shown, the transistor has a β = 140 and that all the statement below about the transistor are true except  a. in the saturation region b. power delivered by the 5 V source is 1.79 mW c. operating in the active region d. power dissipation of the transistor is 300 mW