Tutorial1

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3450

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Oct 30, 2023

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ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 3.2- Calculate the value of n i for gallium arsenide (GaAs) at T=300 K. the constant B = 3.56×10 14 cm -3 K -3/2 and the bandgap voltage E g =1.42 eV. Compare with that of silicon at the same temperature.
ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 3.10- In a 10-µm-long bar of donor-doped silicon, what donor concentration is needed to realize a current density of 2 mA/µm 2 in response to an applied voltage of 1 V? (Note: Although the carrier mobilities change with doping concentration, as a first approximation you may assume µn to be constant and use 1350 cm 2 /V.s, the value for intrinsic silicon.)
ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 3.11- Holes are being steadily injected into a region of n -type silicon (connected to other devices, the details of which are not important for this question). In steady state, the excess-hole concentration profile shown in figure below is established in the n -type silicon region at room temperature. Here “excess” means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted pn 0 . If N D = 10 16 /cm3, n i = 1.5 × 10 10 /cm 3 , D p = 12 cm 2 /s, and W = 50 nm, find the density of the current that will flow in the x direction.
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ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 3.13- Calculate the built-in voltage of a junction in which the p and n regions are doped equally with 5 × 10 16 atoms/cm 3 . Assume n i = 1.5 × 10 10 /cm 3 . With the terminals left open, what is the width of the depletion region, and how far does it extend into p and n regions? If the cross-sectional area of the junction is 2 µm 2 , find the magnitude of the charged stored on either side of the junction.
ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 3.22- In a forward-biased pn junction show that the ratio of the current component due to hole injection across the junction to the component due to electron injection is given by 𝐼 𝑝 𝐼 𝑛 = 𝐷 𝑝 𝐷 𝑛 𝐿 𝑛 𝐿 𝑝 𝑁 𝐴 𝑁 𝐷 Evaluate this ratio for the case N A = 10 18 /cm 3 , N D = 10 16 /cm 3 , L p = 5 µm, L n = 10 µm, D p = 20 cm2/s, and hence find Ip and In for the case in which the pn junction is conducting a forward current I = 100 µA.
ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 3.23- Calculate I s and the current I for V = 780 mV for a pn junction for which N A = 10 17 /cm 3 , N D = 10 16 /cm 3 , A = 20 µm 2 , n i = 1.5×10 10 /cm 3 , L p = 5 µm, L n = 10 µm, D p = 10 cm 2 /s, and D n = 18 cm 2 /s.
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ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 4.28- For the circuits shown in Figure below the diodes are identical. Find the value of R for which V = 50 mV.
ENGG*3450 /Tutorial-1 / week 4 (Sep. 25 29) 4.36- Use the iterative-analysis procedure to determine the diode current and voltage in the circuit below for V DD = 1.5 V, R = 2 kΩ, and a diode having I s = 10 -15 A.

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