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Description Of 3-D Finfet Systems

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The figure 1 gives a brief description of the 3-D FinFET structures which have been simulated. According to the International Technology Roadmap for Semiconductors (ITRS), The gate length (Lgate) is 15 nm, which corresponds to the 7/8-nm technology having 0.64 nm as gate- oxide thickness. The height (HSi) and width of fin (WSi) are 40nm and 8nm respectively whereas the the fin pitch is 30 nm and the fin aspect ratio is 5 which are taken from the characteristics of Intel 22-nm [1] and 14-nm FinFET technology [7]. The gate work function has been assumed to be tunably achieve an OFF-state leakage current (IOFF) of up to 30 pA/μm which has been consistent with TSMC’s 16-nm FinFET technology [8] which primarily was used for low-power …show more content…

The fin sidewall surfaces along which the transistor current flows were assumed to be {110} crystallographic planes, with transistor current flow in a ⟨110⟩ direction. To boost transistor ON-state current, 2-GPa (tensile) uniaxial stress has been introduced in the fin channel region for nFETs, whereas −2-GPa (compressive) uniaxial stress was introduced in the fin channel region for pFETs.
The effective channel length (Leff) and the peak location of the PTS doping profile (Xdepth) for the SSR FinFETs have been optimized individually such that to ensure the ON-state drive current Id, sat is maximized, whereas maintaining the OFF-state current specification at (IOFF = 30 pA/μm).

The Table II provides an overview of the important performance parameters for the given FinFET devices which have been optimized. Using the constant current criterion of 100 nA×(Weff/Lgate), the threshold voltage, Vt, has been used. For operating voltage VDD = 0.80 V (consistent with ITRS 2013 specifications for the 7/8-nm low-power technology node [6]), SSR FinFET provides for 3.6% and 3.8% improvement in Id,sat for nFETs and pFETs, respectively. The benefit of higher carrier mobility is greater for operation in the linear regime (Vgs = 0.8 V and Vds = 50 mV): SSR FinFET provides for 6.7% and 6% improvement

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