Development Of Domino Cmos Technology For The Design Of Xor Gate

Our object is to confirm Ohm’s law by analyzing the dependence of the electrical current as a function of voltage and as a function of resistance. Also, we studied the current flow and voltage in series and parallel. Finally, the lab determined the equivalence resistance of series and parallel combination of resistors and compared the results with theoretical data.

Gate sizing: is other powerful method of power optimizing. Logic gates on critical paths may be sized up, to meet timing requirement at the cost of higher power utilization; while those on non-critical paths can be sized down to minimize the power consumption.

By David Wenzhong Gao, Senior Member IEEE, Chris Mi, Senior Member IEEE, and Ali Emadi, Senior Member IEEE

Also, the dynamic range is degraded by these strict limitations. Upwards, the dynamic range is lowered due to the reduced signal headroom as a result of reduced supply voltage. Downwards, the dynamic range is limited by larger noise voltages due to curtailed supply currents. The only way to make the operational amplifier survive the trend towards lower supply voltages without weakening its characteristics, is by developing very efficient operational amplifier topologies that combine low voltage and low power operation and be as simple as possible to save die area, in its contemporary sense. In this thesis, we design and analyses different design approach of operational amplifier circuits using power gating technique and MTCMOS leakage reduction techniques. Both these techniques are very effective for reducing leakage power and group delay, increasing gain margin in electronic devices. Here, power gating technique is used to reduce leakage power, group delay and increase gain and phase margin.

This allows us to control the injection of charges into the channel by the gate potential. By injecting charges from the source and applying bias on the drain, charges can drift towards the drain and be collected there. Hence, in contrast to traditional thin film OFETs, where charge carriers move in the lateral direction, in the VOFET architecture, charge carriers move in vertical direction and are subject to various influences along the way. (-- removed HTML --) (-- removed HTML --) 20 (-- removed HTML --) (-- removed HTML --) Most importantly, by applying a gate bias, carriers are accumulated at the gate oxide-organic semiconductor (SC) interface. When the drain bias is increased, the carriers flow vertically to the drain, at the area which is exposed to the drain electric field (i.e., within the hole or perforation area). (-- removed HTML --)

The system memories requirement depends greatly on the nature of the applications which run on the system. Memory performance and capacity requirements are small for simple, low cost systems. In contrast, memory throughput can be the most critical requirement in complex, high performance systems. The following general types of memories can be used in systems such as Volatile and non-volatile memories. SRAM can be found in the cache memory of a computer or as a part of the RAM digital to analog converters on video cards. Static RAM is also used for high-speed registers, caches and small memory banks like a frame buffer on a display adapter. Several scientific and industrial subsystems, modern appliances, automotive electronics, electronic toys, mobile phones, synthesizers and digital cameras also use SRAM. It is also highly recommended for use in PCs, peripheral equipment, printers, LCD screens, hard disk buffers etc. Different transistor counts in used in SRAM architecture such as Bipolar junction transistors used in TTL and ECL which is very fast but consumes a lot of power and MOSFET used in CMOS which is used at low power and also very common today. This paper proposed to improve the stability of SRAM cell and also reduces

Abstract: Nowadays for each and every designing in VLSI era the power consumption plays a vital role. Low power has emerged as a principal theme in today’s electronics industry. The low power VLSI design has important role in designing of many electronic design systems. On designing any combinational or sequential circuits, the power consumption, implementation area, voltage leakage, and efficiency of the circuit are the important parameters to be considered initially. This paper proposes a low-power and area-efficient shift register using pulsed latches. The area and power consumption are reduced by replacing flip-flops with pulsed latches. This method solves the timing problem between pulsed latches through the use of multiple non-overlap delayed pulsed clock signals instead of the conventional single pulsed clock signal. The shift register uses a small number of the pulsed clock signals by grouping the latches to several sub

The switching component of power is independent of the rise and fall time of the logic gates. However, the finite rise and fall times of the input waveforms result in a direct current path between VDD and GND for a short period of time and both PMOS and NMOS devices are ON. Such kind of behaviour leads to incorrect evaluations.

Mayank Chakraverty is with the Semiconductor Research & Development Center, IBM, Bangalore, India (e-mail: nanomayank@yahoo.com).

Approach: - Static as well as dynamic power dissipation can be reduced effectively by reducing the supply voltage. Dynamic power has a quadratic dependency on supply voltage, while both sub-threshold leakage (due to Drain Induced Barrier Lowering, DIBL) and gate leakage exhibit exponential dependencies on the supply voltage. However reducing supply voltage may create problems in circuit operation. Use of dual-VDD is a well-known technique to reap the benefits of voltage scaling without the performance penalty. The timing critical blocks in the design operate on the normal VDD (or VDDH), while non-critical blocks operate on a second supply rail with a lower voltage (or VDDL).

This part of the analysis has been dedicated to test the circuit operation. The testing was carried out to measuring the input and output voltage and components connections were tested using a digital multimeter.

In earlier stages of VLSI circuit design the emphasis is on Area and Speed optimization giving concerns to Packaging and Efficient designing. As the technology scales down according to predictions of Moor’s Law, it is advent that the CMOS dimensions have been scaled down drastically. But due to increase in use of Portable Devices Such as Cellphones, Laptops, Personal Health Monitoring systems, there has been a demand of higher battery life for Portable devices. Whereas big data centers which contains large set of circuits consumes tremendous power and dissipates large amount of heat which incurs huge cost to maintain. The solution for these problems is to design circuits which consume low power which give rise to the concept of Low-Power VLSI designing.

Shen [14] proposed the forward-derived configuration to simplify power-stage configuration. But, it cannot trap the energy in the leakage inductor and is incapable of applying to high output voltage applications. Chih-Lung [15] proposed a multi-input converter (MIC), however the conversion rang is low.

nowadays, but experiences some practical limits. High dynamic power dissipation and leakage current in deep submicron technologies contribute a major proportion of total power dissipation in CMOS circuits designed for