Italse Model And The VASE Model

The author of the article is Walsh, Timothy who has an MD a graduate of Princeton University and of Harvard Medical School. The article was originally published at an organizational site called the American Association for the Advancement of Science, in 1998. The web site was last update on February 24, 2016. The information on the article seems accurate and reliable although sometimes on organizational sites the information is biased toward the

References are properly cited within the paper; reference page includes all citations; proper title page and introduction are present and evidence of spell check and grammar check are not obvious. Seven to 10 errors noted.

The organization of this paper was not always clear throughout. The author’s talking points were out of order, which was where my confusion started. It continued when not all the talking

The Beers Law calibration experiment used many concentrations of crystal violet solutions. Each of these solutions were test and analyzed in order to determine the absorbance of each concentration The results were than graphed and produced a slope of 1.00E05 with an intercept of -2.21E-02.

| The discussion is focused on the topic with ample evidence from the literature. The literature is critiqued. (21.5-25)

This concept can be explained using the term band gap, a property that is characteristic of semiconductors. The band gap can be defined as the difference in energy between the valence and conduction band and is typically in the range of 1-3 eV for semiconductors. In bulk materials the energy bands are a continuum of energy levels arising from the overlapping of the atomic orbital‘s due to the large number of molecules. When a semiconductor is brought to the Nano scale, containing lesser number of molecules, the quantized energy levels become distinct. Thus the addition or removal of atoms significantly changes the energy levels within the band making the band gap size dependent.

A. the literature review provided articles that were relevant and a number of relevant studies and theories were described throughout the study.

Using the reflectance spectrum in these three states, only, does not have high accuracy, as shown in 3, 4 and 5 Tables. However, adding derivative spectrum increases R^2 to a large extent and decreases the relative RMSE. The highest〖 R〗^2, in a 1bit method, relating to the use of the reflectance spectrum code and the derivative code is for 400-1050 nm wavelengths to 2nd order and 500-800nm to 3rd order. In the 2bit case, using the reflectance spectrum and the derivative to 3rd order, in both used wavelength, had better function and the best result for the 3rd state was in the 400-10560nm wavelength to 3rd derivative and 500-800 nm to 2nd order derivative. Deletion of the blue region from the beginning of the spectrum and regions by more than 800nm wavelength were effective in improving the results. Although using 3bit code causes lengthening the disciplinary code, among these three states, by considering the reflectance spectrum and its derivative behavior in more detailed, was more successful than the first two states to manifest the

3. Lancet’s editors should not have publish such a controversial study without further academic experiments and investigations.

3. The spectrophotometer was set at 420nm. Distilled water was also used as the ‘blank’.

The authors relied heavily on two studies to create their argument. The first study mentioned was the Pinto et al article. In this study, "Pinto and colleagues (5) assessed the

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The band theory gives explanations of how Semiconductors differ from metals because as the temperature increases the conductivity increases. The Band Theory considers that for

When the semiconductor materials are homogeneous throughout the entire structure is called a semiconductor homojunction. Materials used to form a homojunction will have similar energy bandgaps, On the other hand, when two different semiconductor materials are used to form a junction, the junction is called a semiconducror heterojunction. The hetero junction is formed with narrow bandgap material with wide bandgap material. Figure 1 shows three possible combinations. When the forbidden band gap of wide bandgap material completely overlaps the bandgap of narrow bandgap materials then it is called straddling which is applicable for most of the heterojunctions. In staggered, a fraction of wide bandgap and narrow band gap are merged tog ether. In case of broken gap there is a bandgap itself between energy bandgaps of different semiconductor.

| This article needs additional citations for verification. Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed.(January 2010)