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MEMRISTOR Memristor Type | Passive | Working principle | Memristance | Invented | Leon Chua (1971) | First production | HP Labs (2008) | Electronic symbol | The memristor (pron.: /ˈmɛmrɨstər/; a portmanteau of "memory resistor") was originally envisioned in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. Leon Chua has more recently said that the memristor definition could be generalized to cover all forms of 2-terminal non-volatile memory devices based on resistance switching effects and Chua has said that the memristor is the oldest known circuit element with its effects predating the resistor, capacitor and inductor. The…show more content…
2. The area of each lobe of the pinched hysteresis loop shrinks as the frequency of the forcing signal increases. 3. As the frequency tends to infinity, the pinched hysteresis loop degenerates to a straight line through the origin, whose slope depends on the amplitude and shape of the forcing signal. According to Chua all resistive switching memories including ReRAM, MRAM, and phase change memory meet these criteria and should thus all be considered memristors. However, it is unclear whether there is sufficient evidence to support this claim since most experimental papers do not provide data for the Lissajous curves over a range of initial conditions or over a range of frequencies. Theory The memristor was originally defined in terms of a non-linear functional relationship between magnetic flux linkage Φm (t) and the amount of electric charge that has flowed, q (t): fΦmt,qt= 0 The variable Φm ("magnetic flux linkage") is generalized from the circuit characteristic of an inductor. It does not represent a magnetic field here, and its physical meaning is discussed below. The symbol Φm may simply be regarded as the integral of voltage over time. [6] In the relationship between Φm and q, the derivative of one with respect to the other depends on the value of one or the other, and so each memristor is characterized by its memristance function describing the charge-dependent rate of change of

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