10.9 The collector characteristics for a certain transistor are shown in Figure P10.9. a. Find the ratio Ic/Ig for Vcg = 10 V and Ig = 100, 200, and 600 µA. b. The maximum allowable collector power dissipation is 0.5 W for Ig = 500 µA. Find Vce. ic, mA 100 90 600 μΑ. 80 500 µA 70 400 μΑ. 60 300 μΑ 50 40 200 µA 30 I3 = 100 µA 20 10 O 2 4 6 8 10 12 14 16 18 "CE, V Figure P10.9 Hint: A reasonable approximation for the power dissipated at the collector is the product of the collector voltage and current P = Ic VCE, where P is the permissible power dissipation, Ic is the quiescent collector current, and Vcg is the operating point collector-emitter voltage.
10.9 The collector characteristics for a certain transistor are shown in Figure P10.9. a. Find the ratio Ic/Ig for Vcg = 10 V and Ig = 100, 200, and 600 µA. b. The maximum allowable collector power dissipation is 0.5 W for Ig = 500 µA. Find Vce. ic, mA 100 90 600 μΑ. 80 500 µA 70 400 μΑ. 60 300 μΑ 50 40 200 µA 30 I3 = 100 µA 20 10 O 2 4 6 8 10 12 14 16 18 "CE, V Figure P10.9 Hint: A reasonable approximation for the power dissipated at the collector is the product of the collector voltage and current P = Ic VCE, where P is the permissible power dissipation, Ic is the quiescent collector current, and Vcg is the operating point collector-emitter voltage.
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Author:Robert L. Boylestad
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Transcribed Image Text:10.9 The collector characteristics for a certain transistor
are shown in Figure P10.9.
a. Find the ratio Ic/Ig for Vcg = 10 V and Ig = 100,
200, and 600 µA.
b. The maximum allowable collector power
dissipation is 0.5 W for Ig = 500 µA. Find Vce.
ic, mA
100
90
600 μΑ.
80
500 µA
70
400 μΑ.
60
300 μΑ
50
40
200 µA
30
I3 = 100 µA
20
10
O 2 4 6 8 10 12 14 16 18
"CE, V
Figure P10.9
Hint: A reasonable approximation for the power dissipated
at the collector is the product of the collector voltage and
current P = Ic VCE, where P is the permissible power
dissipation, Ic is the quiescent collector current, and Vcg is
the operating point collector-emitter voltage.
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