2) Consider a pn junction in equilibrium at room temperature (T = 300 K) for which the doping concentrations are NA Рр: Про, Пп; Pno, Vo, W Use n; — 1019/cm3 and Np 1015/cm3 and the cross-sectional area A = 10-5cm². Calculate 1.5х1010/ст3. ( /4)

A pn junction has NA >> ND . We expect that: There is no depletion region, since NA * ND. The depletion region is wider in the p-type material than in the n-type material. The depletion region width is equal in the n-type and p-type regions. The depletion region is wider in the n-type material than in the p-type material.

Consider the following circuit with Vs(t) = 2.0 + 0.02 sin(2 pi t) V,R1 = R2 = 25ohms Idc = 1mA, Vdc = 5V. Assume Vy = 0.7V and VT = 25mV.a) Draw the equivalent circuit under DCb) Determine the DC voltage and current through the diode.c) Draw the equivalent circuit under acd) Determine the total current through the diode

Calculate the built-in potential barrier in a pn junction. Consider a silicon pn junction at T = 300 with doping concentrations of Na = 2x10¹7 cm¯³ and Nd=1015 cm 3.