2. Figure 1(b) shows a BJT based current mirror with a NMOS M3 based beta helper circuit.The current equation of the NMOS is given by:Kn(Vcs - Vrn) (1+ aVps)In =2where Kn= 100 uA/V², VTn = 0.5 V and 2 → 0. Other parameters of the circuit are same as theearlier part of the question.(a) Derive the equation of mirror ratio MR = IJIREF. Using this, find Io, VBE1 and VCEI ifAEI = 2, AE2 = 2.(b) Derive the equation of mirror ratio MR = I/IREF. Using this, find Io, VBEI and VCEI ifAEI = 2, AE2 = 20.(c) Recalculate the values of MR and I, if VA = 50 V for both the cases of AE2 = 2 and 20while AEI = 2 Vdd()IREF1,=Ic2M3E2ElV BEВЕGND = 0V(b)

Answered: Image /qna-images/answer/37d9798b-67db-4502-bbd2-0c3bb5f70f9a.jpg

Answered: 2. Figure 1(b) shows a BJT based…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
When should the 2 equations be used? when I tried solving for the Gms of two cascaded Nmos , the same values were obtained when I used the second equation, however, when I used the first equation, the Gm of the two mosfets were different since their VGS is different. Which one should I go for?
(a) A layout design error causes the W/L ratios of the two NMOSFETs in a differential ampliﬁer to differ by 10 percent. What will be the gatesource voltage difference between these two transistors when their drain currents are identical if the nominal value of (VGS−VTN) = 0.5 V? (Assume VTN = 0.7 V,λ = 0 and identical values of K'n). (b) What degree of matching is required for a gate source voltage difference of less than 3mV? (c) For 1 mV?
For the transistor , IS = 6×10−16 μA,αF = 0.985, and αR = 0.25. (a) What type oftransistor is in this circuit? (b) Label the collector, base, and emitter terminals of the transistor.(c) Label the emitter-base and collector-base voltages, and label the normal direction for IE , IC, andIB. (d) Write the simplified form of the transportmodel equations that apply to this particular circuitconfiguration. Write an expression for IE /IC. Writean expression for IE /IB. (e) Find the values of IE ,IC, IB, βF , βR, VE B, and VC B.
Considering the dc operating conditions of the NMOS circuit in the figure, gm = 4.1 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 10.2 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ. a. 1,34 mA b. 0,40 mA c. 1,74 mA d. 0,94 mA e. 0,67 mA f. 2,01 mA g. 2,81 mA h. 2,41 mA
A PMOS current mirror was designed with an IREF = 1mA. The carrier mobility and oxide capacitance are the same for both device but the (W/L) ratio of Mref = (10/1), while the (W/L) ratio of M1 = (5/1). Find the current ID1 assuming no channel modulation. Answer in mA with 2 decimal places. It was later found out that the value of ?=0.01 and VSD,REF = 0.4V and VSD1 = 0.3V . What is the new ID1 value? Answer in μA with 3 decimal places.
Please answer ASAP. I'll give upvote, thank you. Attach C to B, forming a BJT. In forward active mode, why does a large current flow in the base-collector junction, even though it’s reverse-biased? Answer in 1 sentence.
For an n-channel depletion-mode MOSFET, in the saturation region ID = 8mA when VGS = 0, and the dynamic (incremental) output resistance r0 is infinite. The threshold voltage (or pinch-off voltage) is VTR = VP = –2.5V. For VGS = 0, find the smallest value of VDS at which the MOSFET is in saturation. For VDS equal to this value, find ID when (i) VGS = –1V, (ii) VGS = –2V, (iii) VGS = –3V, (iv) VGS = –4V.
An NMOS device has μn = 400 cm2/V·s. Whatis the cutoff frequency for L = 1 μm if the transistor is biased at 1 V above threshold? What wouldbe the cutoff frequency of a similar PMOS deviceif μp = 0.4 μn? (b) Repeat for L = 0.1 μm
For the NMOSFET circuit shown we give VTN = 0.8 V and kn = 0.5 mA/V2. The operating point (IDQ, VGSQ, and VDSQ) are:
(a) What is the base-emitter voltage in the circuitshown? Use the transport equations and thetransistor parameters from Table shown (b) What isthe base-emitter voltage if βF = 80? (c) What isVBE if IB is increased to 1 mA and βF = 40?
Calculate the transconductance for an NMOS transistor for VGS = 2 V and 3.3 V, with VDS = 3.3 V,if W = 20μm, L = 1 μm, VTN = 0.7 V, andKn = 250 μA/V2. Check the saturation regionassumption

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