4. In a GMR device, estimate the percentage change of resistance for the two layers being parallel vs. antiparallel assuming that for the magnetic layers, the resistance for spin up p↑ is five times higher than for spin down p₁.

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4. In a GMR device, estimate the percentage change of resistance for the two layers being
parallel vs. antiparallel assuming that for the magnetic layers, the resistance for spin up p₁ is five
times higher than for spin down P↓.
Transcribed Image Text:4. In a GMR device, estimate the percentage change of resistance for the two layers being parallel vs. antiparallel assuming that for the magnetic layers, the resistance for spin up p₁ is five times higher than for spin down P↓.
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