A dry-wet-dry oxidation cycle of 20 min – 80 min – 20 min is performed at 1100 °C. (a) What is the final oxide thickness for a <100> silicon wafer? (b) What is the final oxide thickness for a <111> silicon wafer?

A dry-wet-dry oxidation cycle of 20 min – 80 min – 20 min is performed at 1100 °C. (a) What is the final oxide thickness for a <100> silicon wafer? (b) What is the final oxide thickness for a <111> silicon wafer?

Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter7: Components Of Optical Instruments

Section: Chapter Questions

Problem 7.11QAP: Why is glass better than fused silica as a prism construction material for a monochromator to be...

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Question

A dry-wet-dry oxidation cycle of 20 min – 80 min – 20 min is performed at 1100 °C.

(a) What is the final oxide thickness for a <100> silicon wafer?

(b) What is the final oxide thickness for a <111> silicon wafer?

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