Question
Asked Nov 3, 2019
A silicon (100) wafer with an initial oxide thickness of do is oxidized in a furnace at 1100 C
with oxygen gas flowing in at a flow rate of 1.5 pm. After 2 hours, the oxide thickness was
measured to be around 175 nm. Calculate the original field oxide thickness do?
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A silicon (100) wafer with an initial oxide thickness of do is oxidized in a furnace at 1100 C with oxygen gas flowing in at a flow rate of 1.5 pm. After 2 hours, the oxide thickness was measured to be around 175 nm. Calculate the original field oxide thickness do?

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Expert Answer

Step 1

First to determine a wet oxidation at 1100oC (That is, 1373 K).

В
-2.05 eV
9.7 x 107 Hm
hr
|хеxp|
( 8.617x101373 K)
eV
wet
KК
В
= 2.895
hr
A
wet
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В -2.05 eV 9.7 x 107 Hm hr |хеxp| ( 8.617x101373 K) eV wet KК В = 2.895 hr A wet

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Step 2

The parabolic rate constant (B)wet is determined as follows,

-0.78 eV
В).
386
hr
х еxp
eV
(1373
wet
8.617 x 10
дm
(B 0.529
hr
wet
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-0.78 eV В). 386 hr х еxp eV (1373 wet 8.617 x 10 дm (B 0.529 hr wet

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Step 3

The general formula to find the final thickness e...

tox
0x
to
В
В
A
After 2 hours, the above equation can be rewritten as follows,
x
2 =
0.529
2.895
2 1.89x20.345x
1.89x20.345x 2 0
x = 0.94, -1.124
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tox 0x to В В A After 2 hours, the above equation can be rewritten as follows, x 2 = 0.529 2.895 2 1.89x20.345x 1.89x20.345x 2 0 x = 0.94, -1.124

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