A Silicon sample with nao 1013 cm3 is illuminated with light and 1.5x1012 electron-holepairs /cm3 are created every microsecond. If =5 us, find the change in the minoritycarrier concentrationAn intrinsic Si sample is doped with donors from one side such that ND No exp (-ax)a) Find an expression for the built in field E(x) at equilibrium over the range for whichND>b) Evaluate E(x) when a1.3 um

As per honor code we can answer only one question at a time. Solution of question 1 is given below.…

Answered: A Silicon sample with nao 1013 cm3 is…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

(c) If an ideal MOS structure is made of a p-type doped Si substrate with a doping concentration of NA = 6 × 1018 cm-3 , and an SiO2 layer with a thickness of 1.1 nm, calculate the depletion width at the threshold (VT) assuming room temperature (T = 300 K). (d) Calculate the threshold voltage (VT) of the ideal MOS structure defined in the question Q1(c).
An N-type silicon sample has a uniform density Nd = 10^17cm^–3 of arsenic, and a P-typesample has Na = 10^15cm^–3. A third sample has both impurities present at the same time.(a) Find the equilibrium minority carrier concentrations at 300 K in each sample.(b) Find the conductivity of each sample at 300 K.(c) Find the Fermi level in each material at 300 K with respect to either the conductionband edge (Ec) or the valence band edge (Ev).
The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight (TOF) photoconductivity measurement. Fig.1(a) is a schematic diagram of the TOF set-up, and Fig.1 (b) is the typical TOF transient measured for a 10 μm thick NPB film sandwiched between an ultrathin Al cathode and an ITO anode. From the constant current plateau in the TOF measurement, as shown in Fig.1(b), the transit time thus obtained for the NPB sample is 9 μs. (a) Calculate the carrier mobility in NPB layer. (b) Explain what type of the carriers, i.e., hole or electron mobility, was measured in the experiment.
A 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.
A Geiger–Mueller tube is a radiation detector that consists of a closed, hollow, metal cylinder (the cathode) of inner radius ra and a coaxial cylindrical wire (the anode) of radius rb Fig. P24.42a). The charge per unit length on the anode is λ, and the charge per unit length on the cathode is −λ. A gas fills the space between the electrodes. When the tube is in use (for example, in measuring radioactivity from fruit in Fig. P24.42b) and a high-energy elementary particle passes through this space, it can ionize an atom of the gas. The strong electric field makes the resulting ion and electron accelerate in opposite directions. They strike other molecules of the gas to ionize them, producing an avalanche of electrical discharge. The pulse of electric current between the wire and the cylinder is counted by an external circuit. (a) Show that the magnitude of the electric potential difference between the wire and the cylinder i
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1.What is the Fermi-Dirac probability for electrons at the intrinsic Fermi level, fe(Ei)?
A diffused silicon PN junction has a linearly graded junction in the P-side with ?=10^19cm−3, and a uniform doping of 3×10^14 cm−3on the N-side. If the depletion layer width of the P-side is 0.8μm at zero bias, find the total depletion layer width, built-in potential, maximum field at zero bias and sketch the potential distribution.
A silicon diode is fabricated by starting with an n-type substrate (Nd = 1016 cm-3), into which indium is diffused to form as a p-type region doped at 1018 cm-3. Assuming that an abrupt p+ -n junction is formed by the diffusion process. a. Calculate the Fermi level position in the p and n regions b. Determine the built in potential c. Calculate the depletion widths on the p and n side.
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
A sample of n-type GaAs whose carrier concentration is 1016 cm-3 has the same dimension is in the same field and the carrier the current of 10 mA calculate the (a) the hall constant in this sample (b) the hall voltage developed across slab ?
What is the value of the BJT transconductance gm at IC = 100 μA and IC =1 mA? What is the value of the diffusion capacitance for each of these currents if the base transit time is 25 ps?
An LED is very efficient because within the LED itself, the electrical energy is directly convertedto light. This energy transfer happens one electron at a time: each electron that crosses the LEDloses the same amount of energy by emitting a a photon whose energy (in eV) is hc/λ, wherehc = 1240eV nm and λ is the wavelength of the light, in nm. The change in the electron’s electricalenergy is, of course, U = eV where e is the electron charge and V the voltage across the LED. Whenthe LED is on it will therefore have a constant voltage in Volts VLED = hc/(eλ) = 1240/λ across it,where λ is the wavelength in nanometers. If no current flows, i.e. if the voltage would be less thanVLED, the LED is off and acts like an open switch and has whatever lower voltage is consistent withthe rest of the circuit.Consider a circuit with an ideal 3V battery, a resistor and an LED in series. We’d like to use thecircuit to light LED’s ranging in color from the infrared (wavelength of 1100 nm) to the near…

SEE MORE QUESTIONS

Recommended textbooks for you

Introductory Circuit Analysis (13th Edition)

Electrical Engineering

ISBN:

9780133923605

Author:

Robert L. Boylestad

Publisher:

PEARSON

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Programmable Logic Controllers

Electrical Engineering

ISBN:

9780073373843

Author:

Frank D. Petruzella

Publisher:

McGraw-Hill Education

Introductory Circuit Analysis (13th Edition)

Electrical Engineering

ISBN:

9780133923605

Author:

Robert L. Boylestad

Publisher:

PEARSON

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Programmable Logic Controllers

Electrical Engineering

ISBN:

9780073373843

Author:

Frank D. Petruzella

Publisher:

McGraw-Hill Education

Fundamentals of Electric Circuits

Electrical Engineering

ISBN:

9780078028229

Author:

Charles K Alexander, Matthew Sadiku

Publisher:

McGraw-Hill Education

Electric Circuits. (11th Edition)

Electrical Engineering

ISBN:

9780134746968

Author:

James W. Nilsson, Susan Riedel

Publisher:

PEARSON

Engineering Electromagnetics

Electrical Engineering

ISBN:

9780078028151

Author:

Hayt, William H. (william Hart), Jr, BUCK, John A.

Publisher:

Mcgraw-hill Education,

SEE MORE TEXTBOOKS