Calculate the theoretical saturation current, Is of an ideal silicon p-n junction having following specifications: ND 1018 cm3, NA= 5x1016 cm3, TT 4 us, D= 13 cm2/s, D 25 cm2/s and a device area of .7x10-3cm2. Also, calculate the forward and reverse current at +0.6 V
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- A silicon pn junction has the following doping condition: 10^(16)cm³ at n-type side and 10^(17) cm at p-type side.calculate total depletion width W, widths of depletion regions at p and n sides of the junction.where Vbi=0.754v Emax=0.0000165v/mA silicon p+ - n junction has a donor doping of 7*10^17 cm-3 on the n −side and across-sectional area of 10^-3 cm^2. If Tp = 2 us and Dp = 10 cm2/s, calculate thecurrent with a forward bias of 0.75V at 300K.A one-sided p+- n Si junction at 300 K is doped with NA = 1019 cm-3 . Choose values of ND and junction area such that the junction capacitance Cj = 0.6 pF at VR = 5.0 V.
- A silicon pn junction employs NA = 2 × 1016 cm−3 and ND = 4 × 1016 cm−3. Determine the built-in potential at room temperature (T = 300 K).Given the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
- Assume the temperature is 300 K. A silicon p-n junction is formed by doping a region in p-type silicon (NA = 1015 cm-3) with P atoms to create an n-type region with dopant level of ND = 5 x 1016 cm-3.a. Calculate for the built-in potential of the p-n junction. b. Calculate the extents of the depletion region in the p-type and n-type sides at equilibrium.For the attenuator circuit shown, assume C1 and C2 to be very large (∞) capacitors. Don’t be thrown off by the capacitors (How do they behave at DC? How do they behave at AC if C =∞). Assume D1 and D2 are identical diodes with n=1, V T = 25 mV (use the exponential model). a. Determine the value of the dc voltage, V_N when I = 1mA. b. Draw the small-signal equivalent circuit, replacing the diodes with their small signal resistive model, r_d. c. Determine the value of V_o/V_s when I = 1mA.For an ideal silicon p-n abrupt junction with NA = 1017 cm-3 and ND = 1015 cm-3(a)calculate Vbi at 250, 300, 350, 400, 450 and 500 K and plot Vbi versus T. (b) comment on your result in terms of energy band diagram. (c) find the depletion layer width and the maximum field at zero bias for T = 300 K
- Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?An abrupt p-n junction has a doping concentration of 10^15, 10^16, or 10^17 cm-3 on thelightly doped n-side and of 1019 cm-3 on the heavily doped p-side. Obtain series of 1/C2 versus V, where V ranges from -4 to 0V in steps of 0.5V. Comment on the slopes and the interceptions at the voltage axis of these curvesThe diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)