Question
Asked Oct 20, 2019
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Calculate the theoretical saturation current, Is of an ideal silicon p-n junction having following
specifications: ND 1018 cm3, NA= 5x1016 cm3, TT 4 us, D= 13 cm2/s, D 25 cm2/s and a
device area of .7x10-3cm2. Also, calculate the forward and reverse current at +0.6 V
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Calculate the theoretical saturation current, Is of an ideal silicon p-n junction having following specifications: ND 1018 cm3, NA= 5x1016 cm3, TT 4 us, D= 13 cm2/s, D 25 cm2/s and a device area of .7x10-3cm2. Also, calculate the forward and reverse current at +0.6 V

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Expert Answer

Step 1

Theoretical saturation current Is is calculated as,

 

I, Aqn
+
A area of cross-section
0.7x 103 cm
D2,D diffusion constant of holes and electrons respectively
cm2
=13
cm2
=25
- diffusion length of holes and electrons respectively
Np,N donor and acceptor ions concentration
=108 cm3
= 5x 106 cm3
n =intrinsic concentration
1.5x 1010 cm3
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I, Aqn + A area of cross-section 0.7x 103 cm D2,D diffusion constant of holes and electrons respectively cm2 =13 cm2 =25 - diffusion length of holes and electrons respectively Np,N donor and acceptor ions concentration =108 cm3 = 5x 106 cm3 n =intrinsic concentration 1.5x 1010 cm3

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Step 2

Putting all values in expression,

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Step 3

Forward current at 0.6 V ...

I I
n2,for silicon,
0.6
>26m¥
1.3x1016
-1
1.3x1.026x 10~11
0.133 x1010A
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I I n2,for silicon, 0.6 >26m¥ 1.3x1016 -1 1.3x1.026x 10~11 0.133 x1010A

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