
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Transcribed Image Text:Consider an NMOS transistor
operating in the triode region with VGS = 3V,
MA
2.5 m2
Vtn = 0.7V, and kn =
=
a) Find an expression for the incremental
resistance.
rds =
1/2 дір
JVDs
VDS=VDS
b) Give the values of rds for VDs = 0, 0.46,
1.15, 1.84V, and 2.3V.
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- Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forwardi need detail explanations on how to solve this questionarrow_forwardThe NMOS and PMOS transistors have the following characteristics. The channel length is 350 nanometers. For NMOS: tox=50nm, Vtn-0.25V, un-560cm²/vsec, W=700nm, L=350nm For PMOS: tox-50nm, Vtp=-0.35V, up-240cm²/vsec, W=700nm, L=350nm a) Compute the NMOS gate capacitance CG in Femto Farads. b) Compute the resistance Rp for PMOS if the power supply voltage (Vdd) is 3.3 volts and the threshold voltage is 0.35 volts. Use the multiplying adjustment factor as 2.5.arrow_forward
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