Question
In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100
silicon substrate using
CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient.
Calculate the thickness of the final oxide layer.
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Transcribed Image Text

In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.

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