In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.

In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.

EBK ELECTRICAL WIRING RESIDENTIAL

19th Edition

ISBN:9781337516549

Author:Simmons

Publisher:Simmons

Chapter19: Special-purpose Outlets-water Pump, Water Heater

Section19.2: Water Heater Branch Circuit

Problem 8R: For residential water heaters, the Consumer Product Safety Commission suggests a maximum temperature...

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Question

In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100
silicon substrate using
CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient.
Calculate the thickness of the final oxide layer.

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