The semiconductor gallium arsenide, GaAs, is used in highspeedintegrated circuits, light-emitting diodes, and solarcells. Its density is 5.32 g/cm3. It can be made by reactingtrimethylgallium, (CH3)3Ga, with arsine gas, AsH3. Theother product of the reaction is methane, CH4. (a) If youreacted 450.0 g of trimethylgallium with 300.0 g of arsine,what mass of GaAs could you make? (b) Which reactant, ifany, would be left over, and how many moles of the leftoverreactant would remain? (c) One application of GaAs uses itas a thin film. If you take the mass of GaAs from part (a) andmake a 40-nm thin film from it, what area, in cm2, would itcover? Recall that 1 nm = 1 x 10-9 m.

Question
Asked Mar 4, 2020
4 views

The semiconductor gallium arsenide, GaAs, is used in highspeed
integrated circuits, light-emitting diodes, and solar
cells. Its density is 5.32 g/cm3. It can be made by reacting
trimethylgallium, (CH3)3Ga, with arsine gas, AsH3. The
other product of the reaction is methane, CH4. (a) If you
reacted 450.0 g of trimethylgallium with 300.0 g of arsine,
what mass of GaAs could you make? (b) Which reactant, if
any, would be left over, and how many moles of the leftover
reactant would remain? (c) One application of GaAs uses it
as a thin film. If you take the mass of GaAs from part (a) and
make a 40-nm thin film from it, what area, in cm2, would it
cover? Recall that 1 nm = 1 x 10-9 m.

Expert Answer

This question hasn't been answered yet.

Ask an expert

Check out a sample Q&A here.

The solution to your study problems

Solutions are written by subject matter experts who are available 24/7. Questions are typically answered within 1 hour.*

Get Started
*Response times may vary by subject and question.