Chapter 1, Problem 1.10P

(a) A silicon semiconductor material is to be designed such that the majority carrier electron concentration is $n_o=7\times {10}^{15}{\text{cm}}^{-3}$ . Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron concentration? What concentration of dopant impurity atoms is required? (b) In this silicon material, the minority carrier hole concentration is to be no larger than $p_o={10}^6{\text{cm}}^{-3}$ . Determine the maximum allowable temperature.