Chapter 1, Problem 1.4EP

Consider silicon at $T=300\text{K}$ . Assume the hole concentration is given by $p={10}^{16}{e}^{-x/L_p}\left({\text{cm}}^{-3}\right)$ , where $L_p={10}^{-3}\text{cm}$ . Calculate the hole diffusion current density at (a) $x=0$ and (b) $x={10}^{-3}\text{cm}$ . Assume $D_p=10{\text{cm}}^{\text{2}}\text{/s}$ . (Ans. (a) $16{\text{A/cm}}^{\text{2}}$ , (b) $5.89{\text{A/cm}}^{\text{2}}$ )