Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
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Chapter 10, Problem 10.63P

Repeat Problem 10.62 for the modified Wilson current mirrorFigure 10.20(b).

(a)

Expert Solution
Check Mark
To determine

The value of IO for given VD3 .

Answer to Problem 10.63P

  IO=80μA

Explanation of Solution

Given:

  V+=5VV=5VVTN=1VIREF=80μAKn=80μA/V2λ=0.02V1

Calculation:

The given circuit is,

  Microelectronics: Circuit Analysis and Design, Chapter 10, Problem 10.63P , additional homework tip  1

Calculate gate-to-source voltage VGS4

  IREF=Kn(VGS4VTN)2

Substitute the given values,

   I REF = K n ( V GS4 V TN ) 2 80× 10 6 =80× 10 6 ( V GS4 1) 2 80× 10 6 80× 10 6 = ( V GS1 1) 2 1= ( V GS1 1) 2 VGS4=2V

The gate and drain terminal of M4 are common so,

  VDS4=VGS4=2V

Also

  VGS1=VGS2=VGS3=VGS4=2V

  VGS1=VG1VS1=2V

Substitute VS1=5V ,

  VG1(5)=2VVG1+5=2VVG1=VG2=3V

MOSFET M1 and M2 form a current mirror so drain current ID2=ID3 and ID1=ID2

  IO=IREF(1+λVDS31+λVDS1)IO=IREF(1+λ(VD3VS3)1+λVDS1)

Substitute VG2 for VS3 ,

  IO=IREF(1+λ(VD3VG2)1+λVDS1)(1)

Apply KVL to loop M1 to M4 to M3 to M2 ,

  VGS4+VDS1=VGS2+VGS3VDS1=VGS2+VGS3VGS4

Substitute VGS2,VGS3,VGS4=2V

  VDS1=2+22VDS1=2V

Now calculate IO for VD3=1V ,

  IO=IREF(1+λ(VD3VS3)1+λVDS1)(VS3=VG2)IO=80×106(1+0.02(VD3VG2)1+λVDS1)IO=80×106(1+0.02(1(3)1+0.02×2)IO=80×106(1+0.041+0.04)IO=80μA

  IO=80μA

Conclusion:

  IO=80μA

(b)

Expert Solution
Check Mark
To determine

The value of IO for given VD3 .

Answer to Problem 10.63P

  IO=86.153μA

Explanation of Solution

Given:

  V+=5VV=5VVTN=1VIREF=80μAKn=80μA/V2λ=0.02V1

Calculation:

The given circuit is,

  Microelectronics: Circuit Analysis and Design, Chapter 10, Problem 10.63P , additional homework tip  2

Calculate gate-to-source voltage VGS4

  IREF=Kn(VGS4VTN)2

Substitute the given values,

   I REF = K n ( V GS4 V TN ) 2 80× 10 6 =80× 10 6 ( V GS4 1) 2 80× 10 6 80× 10 6 = ( V GS1 1) 2 1= ( V GS1 1) 2 VGS4=2V

The gate and drain terminal of M4 are common so,

  VDS4=VGS4=2V

Also

  VGS1=VGS2=VGS3=VGS4=2V

  VGS1=VG1VS1=2V

Substitute VS1=5V ,

  VG1(5)=2VVG1+5=2VVG1=VG2=3V

MOSFET M1 and M2 form a current mirror so drain current ID2=ID3 and ID1=ID2

  IO=IREF(1+λVDS31+λVDS1)IO=IREF(1+λ(VD3VS3)1+λVDS1)

Substitute VG2 for VS3 ,

  IO=IREF(1+λ(VD3VG2)1+λVDS1)(1)

Apply KVL to loop M1 to M4 to M3 to M2 ,

  VGS4+VDS1=VGS2+VGS3VDS1=VGS2+VGS3VGS4

Substitute VGS2,VGS3,VGS4=2V

  VDS1=2+22VDS1=2V

Now calculate IO for VD3=+3V

  IO=IREF(1+λ(VD3VS3)1+λVDS1)(VS3=VG2)IO=80×106(1+0.02(VD3VG2)1+λVDS1)IO=80×106(1+0.02(+3(3)1+0.02×2)IO=80×106(1+0.121+0.04)IO=80×106(1.121.04)IO=86.153μA

Conclusion:

  IO=86.153μA

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Chapter 10 Solutions

Microelectronics: Circuit Analysis and Design

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The...Ch. 10 - Prob. 10.71PCh. 10 - Prob. D10.72PCh. 10 - Prob. 10.73PCh. 10 - Prob. D10.74PCh. 10 - Prob. 10.75PCh. 10 - For the circuit shown in Figure P10.76, the...Ch. 10 - Prob. 10.77PCh. 10 - Prob. 10.78PCh. 10 - The bias voltage of the MOSFET amplifier with...Ch. 10 - Prob. 10.80PCh. 10 - Prob. 10.81PCh. 10 - Prob. 10.82PCh. 10 - A BJT amplifier with active load is shown in...Ch. 10 - Prob. 10.84PCh. 10 - Prob. 10.85PCh. 10 - Prob. 10.86PCh. 10 - The parameters of the transistors in Figure P10.87...Ch. 10 - The parameters of the transistors in Figure P10.88...Ch. 10 - A BJT cascode amplifier with a cascode active load...Ch. 10 - Design a bipolar cascode amplifier with a cascode...Ch. 10 - Design a MOSFET cascode amplifier with a cascode...Ch. 10 - Design a generalized Widlar current source (Figure...Ch. 10 - The current source to be designed has the general...Ch. 10 - Designa PMOS version of the current source circuit...Ch. 10 - Consider Exercise TYU 10.10. 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