Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN: 9781337900348
Author: Stephen L. Herman
Publisher: Cengage Learning
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Chapter 18, Problem 5PP

In an R-L parallel circuit, R = 240 and X L = 360   Ω . Find impedance.

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3. A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of NA=2X1015/cm³ and an n-side doping of ND=1015/cm³. Compare a) Vbi b) xp, Xn, and W c) ɛ at x=0 d) V at x=0 Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position. 4. Repeat problem 3, taking NA=10¹7/ cm³ to be the p-side doping. Briefly compare the results here with those of problem 3.
The p-i-n diode shown schematically in Fig 5 is a three-region device with a middle region that is intrinsic and relatively narrow. Assuming the p and n regions to be uniformly doped and ND-NA=0 in the i-region. a) Roughly sketch the expected charge density, electric field, and electrostatic potential inside the device. Also draw the energy band diagram for the device under equilibrium conditions. b) What is the built-in voltage drop between the p and n regions?
Consider the p1-p2 "isotype" step junction shown in Figure 2. a) Draw the equilibrium energy band diagram for the junction, taking the doping to be non degenerate and NA1 > NA2 b) Derive an expression for the built-in voltage (Vыi) that exists across the junction under equilibrium conditions c) Make rough sketches of the potential, electric field, and charge density inside the junction.

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Delmar's Standard Textbook Of Electricity

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