Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

Question

Want to see more full solutions like this?

Answer 1

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Students have asked these similar questions

Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.

Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.

Please answer immediately and correctly. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find kp and kn.

Answer 2

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Answer 3

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Answer 4

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Answer 5

Textbook Question

Answer 6

Textbook Question

Answer 7

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 8

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

Answer 9

(a).

Expert Solution

Answer 10

(a).

Expert Solution

Answer 11

Expert Solution

Answer 12

To determine

The value of drain current in PMOS transistor.

Answer 13

Answer to Problem 3.17P

ID=0.21 mA

Answer 14

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

Answer 15

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

Answer 16

(b).

Expert Solution

Answer 17

(b).

Expert Solution

Answer 18

Expert Solution

Answer 19

To determine

The value of drain current in PMOS transistor.

Answer 20

Answer to Problem 3.17P

ID=0.66 mA

Answer 21

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

Answer 22

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

Answer 23

(c).

Expert Solution

Answer 24

(c).

Expert Solution

Answer 25

Expert Solution

Answer 26

To determine

The value of drain current in PMOS transistor.

Answer 27

Answer to Problem 3.17P

ID=0.81 mA

Answer 28

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

Answer 29

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 30

(d).

Expert Solution

Answer 31

(d).

Expert Solution

Answer 32

Expert Solution

Answer 33

To determine

The value of drain current in PMOS transistor.

Answer 34

Answer to Problem 3.17P

ID=0.844 mA

Answer 35

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 36

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 37

(e).

Expert Solution

Answer 38

(e).

Expert Solution

Answer 39

Expert Solution

Answer 40

To determine

The value of drain current in PMOS transistor.

Answer 41

Answer to Problem 3.17P

ID=0.844 mA

Answer 42

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 43

Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EP Ch. 3 - The transistor in Figure 3.26(a) has parameters...

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

Concept explainers

Videos

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Want to see more full solutions like this?

Chapter 3 Solutions