Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
Chapter 3, Problem 3.8EP

(a) Consider the circuit shown in Figure 3.33. The transistor parameters are V T P = 0.40 V and K p = 30 μ A/V 2 . Design the circuit such that I D Q = 60 μ A and V S D Q = 2.5 V . (b) Determine the variation in Q−point values if the V T P and K p parameters vary by ±5 percent. (Ans. (a) R S = 19.77 k Ω , R D = 38.57 k Ω ; (b) 58.2 I D Q 61.08 μ A , 2.437 V S D Q 2.605 V )

(a).

Expert Solution
Check Mark
To determine

The design parameters of the circuit.

Answer to Problem 3.8EP

  RS=19.77RD=38.57

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 3, Problem 3.8EP , additional homework tip  1

  VTP=0.4V,KP=30μAV2IDQ=60μA,VSDQ=2.5V

Calculation:

Assuming the transistor operates in saturation region.

  IDQ=KP( V SG+ V TP)260=30( V SG0.4)2( V SG0.4)2=2VSG=1.414+0.4VSG=1.814V

From above calculation:

  VSD>VSG+VTP2.5>1.8140.42.5>1.414

Hence, the assumption is correct and the transistor operates in saturation region.

The voltage of source terminal is:

  VSG=VSVG1.814=VS0VS=1.814V

The voltage of drain terminal is:

  VSD=2.5VSVD=2.51.814VD=2.5VD=0.686V

The value of RS is:

  ID=3VSRS0.06=31.814RSRS=1.1860.06RS=19.77

The value of RD is:

  ID=VD( 3)RD0.06=0.686+3RDRD=2.3140.06RD=38.57

(b).

Expert Solution
Check Mark
To determine

The range of values of ID,VSD .

Answer to Problem 3.8EP

  58.6μAIDQ61.2μA2.429VVSDQ2.58V

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 3, Problem 3.8EP , additional homework tip  2

  VTP=0.4V,KP=30μAV2IDQ=60μA,VSDQ=2.5V

Calculation:

The value of VSG is:

  VSG=1.814V

Values of KP,VTP :

  KP=30±(5ooof30)μAV2KP=30±(5 100×30)μAV2KP=30±(1.5)μAV2( K P)max=(30+1.5)μAV2( K P)max=31.5μAV2( K P)min=(301.5)μAV2( K P)min=28.5μAV2

  VTP=0.4±(5ooof0.4)VVTP=0.4±(5 100×( 0.4))VVTP=0.4±(0.02)VTPmax=0.4+(0.02)=0.42VVTPmin=0.4(0.02)=0.38V

The value of ID is maximum for (Kp)max,VTPmax .

  ( I D)max=( K P)max( V SG+ V TP max)2( I D)max=(31.5× 10 6)(1.8140.42)2( I D)max=61.2μA

Applying Kirchhoff’s voltage law in drain-source terminals:

  ( V SD)min=3( I D)max(RD+RS)(3)( V SD)min=6(0.0612)(19.77+38.57)( V SD)min=2.429V

The value of ID is minimum for (Kp)min,VTPmin .

  ( I D)min=( K P)min( V SG+ V TPmin)2( I D)min=(28.5× 10 6)(1.8140.38)2( I D)min=58.6μA

Applying Kirchhoff’s voltage law in drain-source terminals:

  ( V SD)max=3( I D)min(RD+RS)(3)( V SD)max=6(0.0586)(19.77+38.57)( V SD)max=2.58V

The values of ID,VSD is:

  58.6μAID61.2μA2.429VVSD2.58V

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Chapter 3 Solutions

Microelectronics: Circuit Analysis and Design

Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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