Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
9th Edition
ISBN: 9781259989452
Author: Hayt
Publisher: Mcgraw Hill Publishers
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Chapter 7, Problem 9E
To determine

Find the capacitance of the diode if VA=1 V, if VA=3 V and if VA=10 V.

Expert Solution & Answer
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Answer to Problem 9E

The capacitance of the diode if VA=1 V is 10.1582 fF, if VA=3 V is 6.7952 fF and if VA=10 V is 3.9674 fF.

Explanation of Solution

Given Data:

The given expression for the junction capacitance is Ksε0AW,

The given expression of depletion width of diode is 2Ksε0qN(VbiVA).

The cutoff voltage of the diode is 0.62 V,

Magnitude of charge of electron is 1.6×1019 C,

Value of Ks is given as 11.8 for silicon diode,

The cross sectional area is given as 2 μm2 and

Volume density of electrons is given as 5.0×1018 cm3.

Formula used:

The expression for junction capacitance is as follows,

Cj=Ksε0AW (1)

Here,

A is the cross sectional area,

W is the depletion width,

Cj is the junction capacitance,

ε0 is the permittivity of free space and

Ks is the constant.

The expression for depletion width of the diode is as follows,

W=2Ksε0qN(VbiVA) (2)

Here,

q is the magnitude of charge of electron,

N is the volume density of electrons,

Vbi is the cutoff voltage of diode,

VA is the voltage across the diode and

W is the depletion width.

Calculation:

Substitute 11.8 for Ks, 1.6×1019 C for q, 5.0×1018 cm3 for N, 0.62 V for Vbi, 8.854×1012 Fm for ε0 and 1 V for VA in equation (2),

W=2×11.8×8.854×1012 Fm(1.6×1019 C)×(5.0×1018 cm3)((0.62 V)(1 V))  =2×11.8×8.854×1012 Fm(1.6×1019 C)×(5.0×1018×106 m3)((0.62 V)(1 V))             { 1 cm3=106 m3}=2.057×108 m

Substitute  11.8 for Ks, 8.854×1012 Fm for ε0, 2.057×108 m for W and 2 μm2 for A in equation (1),

Cj=11.8×(8.854×1012 Fm)×(2 μm2)2.057×108 m=11.8×(8.854×1012 Fm)×(2×1012 m2)2.057×108 m                   { 1 μm2=1012 m2}=101.582×1016 F=10.1582 fF                                                                    { 1 F=1015 fF}

Substitute 11.8 for Ks, 1.6×1019 C for q, 5.0×1018 cm3 for N, 0.62 V for Vbi, 8.854×1012 Fm for ε0 and 3 V for VA in equation (2),

W=2×11.8×8.854×1012 Fm(1.6×1019 C)×(5.0×1018 cm3)((0.62 V)(3 V))  =2×11.8×8.854×1012 Fm(1.6×1019 C)×(5.0×1018×106 m3)((0.62 V)(3 V))             { 1 cm3=106 m3}=3.075×108 m

Substitute  11.8 for Ks, 8.854×1012 Fm for ε0, 3.075×108 m for W and 2 μm2 for A in equation (1),

Cj=11.8×(8.854×1012 Fm)×(2 μm2)3.075×108 m=11.8×(8.854×1012 Fm)×(2×1012 m2)3.075×108 m                   { 1 μm2=1012 m2}=67.952×1016 F=6.7952 fF                                                                     { 1 F=1015 fF}

Substitute 11.8 for Ks, 1.6×1019 C for q, 5.0×1018 cm3 for N, 0.62 V for Vbi, 8.854×1012 Fm for ε0 and 10 V for VA in equation (2),

W=2×11.8×8.854×1012 Fm(1.6×1019 C)×(5.0×1018 cm3)((0.62 V)(10 V))  =2×11.8×8.854×1012 Fm(1.6×1019 C)×(5.0×1018×106 m3)((0.62 V)(10 V))             { 1 cm3=106 m3}=5.2667×108 m

Substitute  11.8 for Ks, 8.854×1012 Fm for ε0, 5.2667×108 m for W and 2 μm2 for A in equation (1),

Cj=11.8×(8.854×1012 Fm)×(2 μm2)5.2667×108 m=11.8×(8.854×1012 Fm)×(2×1012 m2)5.2667×108 m                   { 1 μm2=1012 m2}=39.674×1016 F=3.9674 fF                                                                     { 1 F=1015 fF}

Conclusion:

Thus, the capacitance of the diode if VA=1 V is 10.1582 fF, if VA=3 V is 6.7952 fF and if VA=10 V is 3.9674 fF.

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Chapter 7 Solutions

Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf

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