Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 7, Problem D7.3P
To determine
The value of drain resistance to bias the transistor at Q -point. The coordinates of VTC end point B. The small signal voltage gain of the amplifier. The maximum allowable negative signal swing at output and corresponding value of peak input signal such that the transistor operates in linear region.
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For the circuit shown in Fig. P7.53. draw a complete small-signal equivalent circuit utilizing an appropriate T model for the BJT (use alpha= 0.99). Neglect the transistor output resistance r0. Your circuit should show the values of all components, including the model parameters. What is the input resistance Rin? Calculate the overall voltage gain (vo/vsig).
For the follower circuit in Fig. P7.137, let transistor Q1 have β = 50 and transistor 2 have β = 100, and neglect the effect of ro. Use VBE = 0.7V
(a) Find the dc emitter currents of Q1 and Q2. Also, find the dc voltages VB1 and VB2.(b) If a load resistance RL = 1 kΩ is connected to the output terminal, find the voltage gain from the base to the emitter of Q2, , vo/vb2, and find the input resistance Rib2 looking into the base of Q2. (Hint: Consider Q2 as an emitter follower fed by a voltage Vb2 at its base).(c) Replacing Q2 with its input resistance Rib2 found in (b), analyze the circuit of emitter follower Q1 to determine its input resistance Rin, and the gain from its base to its emitter, ve1/vb1(d) If the circuit is fed with a source having a 100 kΩ resistance, find the transmission to the base of Q1, Vb1/Vsig(e) Find the overall voltage gain Vo/Vsig
It is required to design the bias circuit of Fig. 7.52 for a BJT whose nominal β=100.
(a) Find the largest ratio (RB/RE) that will guarantee IE remains within ±5% of its nominal value for β as low as 50 and as high as 150 .
Chapter 7 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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- Find the short-circuit time constants and fL for the common-source amplifier As Shown if ID = 1.5 mA and VGS−VTN = 0.5 V. Assume λ = 0.015/V. The other values remain unchanged.arrow_forwardThere is a requirement to design a transistor amplifier circuit which gives a voltage amplification of 25dB. What are the further details that you as a designer require in order to complete the design process? If the input to the amplifier above is , what is the output? Sketch a suggested configuration for the amplifier circuit and plot both input and output signals on the same axes.arrow_forwardA common-emitter amplifier similar to as shown is operating from a single +20-V power supply, and the emitter terminal is bypassed by capacitor C3. The BJT has βF =100 and VA=50 V and is operating at a Q-point of (100 μA, 10 V). The amplifier has RI = 5 kΩ, RB = 150 kΩ, RC = 100 kΩ, and R3 = ∞. What is the voltage gain predicted from our rule of thumb estimate? What is the actual voltage gain? What is the value of μf for this transistor?arrow_forward
- Given a transistor amplifier of gain ß = 100 with emitter bias, determine the values of Rb and Re given that Rc is equal to 1 kΩ. The voltage gain without capacitor CE must equal Av = -2.6 and the gain with capacitor CE must equal Av= -180. Calculate the voltages VCE and Vcb using the values calculated earlier Note:it is not necessary to consider a Vcc value to determine what is requested in questionarrow_forward3)Determine the gain (Avf) of the following circuit, when a continuous signal is applied at the input of the same. Super the ideal opam and the capacitors initially dischargedarrow_forwardDesign the bias-stable circuit in the form of Fig with β = 120 such that ICQ =0.8mA VCEQ =5v and the voltage across RE is approximately 0.7v .arrow_forward
- Find the rout resistance.The internal resistance of the MOS transistor will not be neglected The transistors are not the same .Therefore, the gm values are not the samarrow_forwardA common-emitter amplifier similar to as shown is operating from a single +20-V power supply, and the emitter terminal is bypassed by capacitor C3. The BJT has βF =100 and VA=50 V and is operating at a Q-point of (100 μA, 10 V). The amplifier has RI = 5 kΩ, RB = 150 kΩ, RC = 100 kΩ, and R3 = ∞. What is the voltage gain predicted using our rule of thumb estimate? What is the actual voltage gain? What is the value of μf for this transistor?arrow_forwardGain of the amplifier falls of at high frequency due to internal capacitance of MOSFET. Determine the capacitances between different terminals of MOS transistor when it is operating in linear region at the drain to source voltage of 1 V. Device geometry and parasitic capacitances of MOSFET are: Gate oxide thickness 5 nm, channel length of 0.25 μm, width of the transistor 5 μm, gate overlap/lateral diffusion 10 % of channel length, junction capacitances at zero bias Csb0=Cdb0= 10 fF, built in potential of 0.4 V. Potential difference between source and bulk is 0.4 Varrow_forward
- The overall voltage gain of a CS amplifier with a resistance Rs = 0.5 k ohms in the source lead was measured & found to be -10 V/V. When Rs was shorted, but the circuit remaind linear, the gain doubled. What must gm be? What value of Rs is needed to obtain an overall voltage gain of -16 V/V?arrow_forwardFill in the Blanks.4. A ______________ device employs a unique combination of a p-channel and an n-channel MOSFETwith a single set of external leads.5. For most BJT configurations the dc analysis begins with a determination of the _________ current.6. For the dc analysis of a transistor network, all capacitors are replaced by an _____ circuit equivalent .7. The ___________ bias configuration is probably the most common of all the configurations due to its less sensitivity to changes in beta from one transistor to another.arrow_forwardConsider the following circuit. Find the required value of RC to operate the BJT on the boundary between F.A and saturation regions. Assume that the value of VCE is 0.2 V at the boundary of F.A and saturation regions.arrow_forward
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