Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 8.49P

For the class−AB output stage in Figure 8.36, the parameters are: V + = 24 V , V = 24 V , R L = 20 Ω , and I B i a s s = 10mA . The diode and transistor parameters are I S = 2 × 10 12 A . The transistor current gains are β n = 20 and β p = 5 for the npn and pnp devices, respectively. (a) For υ O = 0 , determine V B B , and the quiescent collector current and base−emitter voltage for each transistor. (b) An average power of 10 watts is to be delivered to the load. Determine the quiescent collector current in each transistor and the instantaneous power dissipated in Q 2 , Q 5 , and R L when the output voltage is at its peak negative amplitude.

(a)

Expert Solution
Check Mark
To determine

The value of VBB , the quiescent collector current and the base emitter voltage for each transistor.

Answer to Problem 8.49P

The value of the VBB is 1.74191V , VBE1 is 0.58065V , VBE3 is 0.50276V , VBE2 is 0.6585V , IC2 is 0.2A , IC1 is 10×103A and IC3 is 0.5×103A .

Explanation of Solution

Calculation:

The given diagram is shown in Figure 1

  Microelectronics: Circuit Analysis and Design, Chapter 8, Problem 8.49P

The conversion from 1mA into A is given by

  1mA=103A

The conversion from 10mA into A is given by

  10mA=10×103A

The expression for the value of voltage VBB is given by

  VBB=3VTln(I BiasIS)

Substitute 0.026V for VT , 10×103A for IBias and 2×1012A for IS in the above equation.

  VBB=3(0.026V)ln( 10× 10 3 A 2× 10 12 A)=1.742V

The expression for the value of the voltage VBE1 is given by,

  VBE1=VTln(I C 1 IS) …… (1)

The expression for the value of the voltage VBE2 is given by,

  VBE2=VTln(I C 2 IS) …… (2)

The expression for the value of the voltage VBE3 is given by,

  VBE3=VTln(I C 3 IS) …… (3)

The expression for the value of IC1 is given by,

  IC1=IC2βn …… (4)

The expression for the value of IC3 is given by,

  IC3=IC2βn2 …… (5)

The expression for the value of the voltage VBB is given by,

  VBB=VBE1+VBE2+VBE3 …… (6)

Substitute VTln(I C 2 IS) for VBE2 , VTln(I C 3 IS) for VBE3 and VTln(I C 1 IS) for VBE1 in the above equation.

  VBB=VTln(I C 1 IS)+VTln(I C 2 IS)+VTln(I C 3 IS)

Substitute IC2βn for IC1 , IC2βn2 for IC3 in the above equation.

  VBB=VTln( I C 2 β n I S )+VTln( I C 2 I S )+VTln( I C 2 β n 2 I S )VTln( I C 2 3 β n 3 I s 3 )=VBBIC2=βnISexp( V BB V T )3

Substitute 20 for βn , 2×1012A for IS , 1.742V for VBB and 0.026V for VT in the above equation.

  IC2=(20)(2× 10 12A)exp( 1.742V 0.026V )3=0.2A

Substitute 0.2A for IC2 and 20 for βn in equation (4).

  IC1=0.2A20=10×103A

Substitute 0.2A for IC2 and 20 for βn in equation (5).

  IC3=0.2A( 20)2=0.5×103A

Substitute 10×103A for IC1 and 2×1012A for IS and 0.026V for VT in equation (1).

  VBE1=(0.026V)ln( 10× 10 3 A 2× 10 12 A)=0.58065V

Substitute 0.2A for IC2 and 2×1012A for IS and 0.026V for VT in equation (2).

  VBE2=(0.026V)ln( 0.2A 2× 10 12 A)=0.6585V

Substitute 0.5×103A for IC3 and 2×1012A for IS and 0.026V for VT in equation (3).

  VBE3=(0.026V)ln( 0.5× 10 3 A 2× 10 12 A)=0.50276V

Substitute 0.58065V for VBE1 , 0.6585V for VBE2 and 0.50276V for VBE3 in equation (6).

  VBB=0.58065V+0.6585V+0.50276V=1.74191V

Conclusion:

Therefore, the value of the current iC2 is 9.39×103A , iC1 is 4.47×103A , iC3 is 2.267×103A , iC4 is 45.3×103A and iC5 is 0.952A . The value of the power dissipated in Q2 is 4.132W , Q5 is 13.3W and in RL is 20W .

(b)

Expert Solution
Check Mark
To determine

The value of the quiescent collector current in each transistor and the value of the collector quiescent current and the instantaneous power dissipated in Q2 , Q5 and RL .

Answer to Problem 8.49P

The is 45.3×103A and iC5 is 0.952A . The value of the power dissipated in Q2 is 4.132W , Q5 is 13.3W and in RL is 20W .

Explanation of Solution

Calculation:

The expression for the value of maximum output voltage is given by,

  vO(max)2=2RLP¯L

Substitute 20Ω for RL and 10W for P¯L in the above equation.

  vO( max)2=2( 20Ω)( 10W)=20V

The expression for the value of the current delivered to the load is given by,

  iO(max)=vO( max)RL

Substitute 20V for vO(max) and 20Ω for RL in the above equation.

  iO( max)=20V20Ω=1A

Apply KCL at the output node.

  iC5+iC5βn[βn1+βn]+iC4βn[1+βpβP]+iO(max)=0

Substitute 1A for iO(max) , 20 for βn and 5 for βP in the above equation.

  iC5+i C 5 20[201+20]+i C 4 20[1+55]+(1A)=0iC5=0.952A

The expression for the value of the current iC4 is given by,

  iC4=1βn+1(iC5)

Substitute 0.952A for iC5 and 20 for βn in the above equation.

  iC4=120+1(0.952A)=45.3×103A

The expression for the value of the current iC3 is given by,

  iC3=iC5βn(1+βn)

Substitute 0.952A for iC5 and 20 for βn in the above equation.

  iC3=0.952A20( 1+20)=2.267×103A

The expression for the value of the voltage VBB is given by,

  VEBB=VTlniC3IS

Substitute 2×1012A for IS , 0.026V for VT and 2.267×103A for iC3 in the above equation.

  VEBB=(0.026V)ln2.267× 10 3A2× 10 12A=0.5420.6A

The expression for the value of the current iC2 is given by,

  iC2=βnISexp( V BB V EBB V T )

Substitute 20 for βn , 2×1012A for IS , 0.026V for VT , for VEBB and 1.742V for VBB in the above equation.

  iC2=20(2× 10 12A)exp( 1.742V0.54206V 0.026V )=93.9×103A

The expression for the value of the current iC1 is given by,

  iC1=iC2βn(βn1+βn)

Substitute 93.9×103A for iC2 and 20 for βn in the above equation.

  iC1=( 93.9× 10 3 A)1+20=4.47×103A

The expression for the value of power dissipated in the transistor Q2 is given by,

  PQ2=iC2(V+(v O( max )))

Substitute 9.39×103A for iC2 , 24V for V+ and 20V for vO(max) in the above equation.

  PQ2=9.39×103A(24V( 20V))=4.132W

The expression for the value of power dissipated in the transistor Q2 is given by,

  PQ5=iC5(v O( max )2(V))

Substitute 0.952A for iC2 , 24V for V and 20V for vO(max) in the above equation.

  PQ2=0.952A( 20V2( 24V))=13.3W

Conclusion:

Therefore, the value of the current iC2 is 9.39×103A , iC1 is 4.47×103A , iC3 is 2.267×103A , iC4 is 45.3×103A and iC5 is 0.952A . The value of the power dissipated in Q2 is 4.132W , Q5 is 13.3W and in RL is 20W .

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Chapter 8 Solutions

Microelectronics: Circuit Analysis and Design

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