Dopant

The figure 1 gives a brief description of the 3-D FinFET structures which have been simulated. According to the International Technology Roadmap for Semiconductors (ITRS), The gate length (Lgate) is 15 nm, which corresponds to the 7/8-nm technology having 0.64 nm as gate- oxide thickness. The height (HSi) and width of fin (WSi) are 40nm and 8nm respectively whereas the the fin pitch is 30 nm and the fin aspect ratio is 5 which are taken from the characteristics of Intel 22-nm [1] and 14-nm FinFET

Ruthenium is another transition metal which can be used as a dopant which enhances the stability of the crystal structure. It also increases conductivity and improve performance of the battery. Chromium is another transition metal that can be used as a dopant. It reduces the ordering of lithium ions in LiMn2O4 spinel and this stabilizes the spinel structure. It also increases capacity retention during cycling. Zinc is used as a dopant in cathode materials as it has a stabilizing effect on the crystal

These factors can be eliminated by substitutional doping-based photochemical methodology to achieve the simultaneous reduction and doping through ultraviolet laser irradiation in the presence of a dopant precursor gas [1]. This will not lead to any structural disorder, hence, no effects on the sheet resistance and optical characteristics by the defects invasion. These doping and reduction level of graphene could be controlled by varying the irradiation

[16] and titanium [17] has been widely investigated as effective dopants in ZnO photoelectrode for improving the performance. Moreover, earlier reports on the DSSC have proven that the active area is directly proportional to the power conversion efficiency [18]. Therefore, we attempted to incorporate indium into ZnO to improve above cited aspects with an ideal working area (0.25cm2) of photoanode in DSSC. Indium (In3+) was chosen as dopant, because it has a noteworthy contribution in transparent conducting

Abstract Conductive polymers have promising applications in the field of tissue engineering as tissue scaffolds. Many tissue types respond favorably to electrical stimulation, because of this conductive polymers can be used for the regeneration of damaged tissue. This review will focus on the synthesis and fabrication of conductive polymers as well as their applications in tissue engineering. Introduction All cells exhibit some form of electrical excitability, from voltage gated ion channels

impacted into a solid. Ion implantation can also be referred to as a technique used to deposit precise quantities of n-type and p-type dopants or impurities into a semiconductor at a low temperature. Ion implantation alters the physical, chemical, electronic properties of a material by forcibly impacting different types of ions into the material. In ion implantation, dopant atoms are volatilized, ionized, accelerated, separated by the mass-to-charge ratios and directed at a target. The atoms enter the

modify its pure, crystal structure by displacing some atoms. Because these dopant atoms had different amount of electrons than the semiconductor atoms, they formed conductive paths. If the dopant atoms had more electrons than the semiconductor atoms, the doped regions were called n-type to signify and excess of negative charge. Less electrons, or an excess of positive charge, created p-type regions. By allowing this dopant to take place in carefully delineated areas on the surface of the semiconductor

The first is a keyed Logic Built-In Self-Test (LBIST), One possibility to mitigate the dopant-level Trojans is to make the initial state of the Pseudo-Random Pattern Generator (PRPG) dependant on a configurable key. The PRPG needs to be adapted to generate test patterns based on an initialization value, which is derived from the key. Another way to mitigate the dopant-level Trojans is to modify LBIST so that it uses a different set of test patterns at each test cycle by using

larger size of the incorporated cobalt ions than the original iron ions. After switching to n-type, the increasing carrier concentration may also contributed to the reducing of carrier mobility. As a consequence, cobalt doping served well as an n-type dopant after 3 at% doping level. 3.2.2 Temperature Dependence Figure 2 showed the relationship between the reciprocal of resistivity to the reciprocal of temperature, graphed as a logarithmic plot. The resistance change of the Co-doped FeS2 samples with

proven that the active area is directly proportional to the power conversion efficiency [18]. Therefore, we attempted to incorporate indium to improve above cited aspects with an idea working area (0.25cm2) of prototype DSSC. Indium (In3+) chosen as dopant, because it has a noteworthy contribution in transparent conducting oxide materials and much work devoted in indium doped ZnO as a transparent conducting oxide film [19-20]. Owing to their remarkable properties such as high electronegativity, minute