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. The _________ can actually be used as a voltage-controlled resistor because of a unique sensitivity of the drain-to-source impedance to the gate-to-source voltage. 2. The ________________ for any JFET is labeled IDSS and occurs when VGS = 0 V. 3. The relationship between the drain current and the gate-to-source voltage of a JFET is ______________ as defined by Shockley’s equation. As the current level approaches IDSS , the sensitivity of ID to changes in VGS increases significantly. 4. A ______________ device employs a unique combination of a p-channel and an n-channel MOSFET with a single set of external leads.

. The _________ can actually be used as a voltage-controlled resistor because of a unique sensitivity of the drain-to-source impedance to the gate-to-source voltage. 2. The ________________ for any JFET is labeled IDSS and occurs when VGS = 0 V. 3. The relationship between the drain current and the gate-to-source voltage of a JFET is ______________ as defined by Shockley’s equation. As the current level approaches IDSS , the sensitivity of ID to changes in VGS increases significantly. 4. A ______________ device employs a unique combination of a p-channel and an n-channel MOSFET with a single set of external leads.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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1. The _________ can actually be used as a voltage-controlled resistor because of a unique sensitivity of the drain-to-source impedance to the gate-to-source voltage.
2. The ________________ for any JFET is labeled IDSS and occurs when VGS = 0 V.
3. The relationship between the drain current and the gate-to-source voltage of a JFET is ______________ as defined by Shockley’s equation. As the current level approaches IDSS , the sensitivity of ID to changes in VGS increases significantly.
4. A ______________ device employs a unique combination of a p-channel and an n-channel MOSFET with a single set of external leads.

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