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0.03ev) 9. A Si semiconductor is made n-type by introducing Na donor levels/m³. The donor energy level and Fermi level coincide at 0.1eV below the bottom of conduction band E. Calculate the electron, hole and donor densities for the crystal. (Given E₂ -1.11eV an T =300k)

0.03ev) 9. A Si semiconductor is made n-type by introducing Na donor levels/m³. The donor energy level and Fermi level coincide at 0.1eV below the bottom of conduction band E. Calculate the electron, hole and donor densities for the crystal. (Given E₂ -1.11eV an T =300k)

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0.05ev) 9. A Si semiconductor is made n-type by introducing Na donor levels/m³. The donor energy level and Fermi level coincide at 0.1eV below the bottom of conduction band E. Calculate the electron, hole and donor densities for the crystal. (Given Eg =1.11eV an T =300k)
Transcribed Image Text:0.05ev) 9. A Si semiconductor is made n-type by introducing Na donor levels/m³. The donor energy level and Fermi level coincide at 0.1eV below the bottom of conduction band E. Calculate the electron, hole and donor densities for the crystal. (Given Eg =1.11eV an T =300k)
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