1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp = 0.1 us NE 1019 ст 3 Emitter concentration Dn = 10 cm2/s NB 1016 ст -3 || Base concentration d, Nc = 1019 cm Collector concentration %3D WE 3 µm = Emitter width 1.5 ит %— base-collector junction W = Metallurgical base width, i.e. the distance between base-emitter junction and A = 10-5 cm2 = Cross-sectional area %3D If VCB = 0 V and VEB = 0.6 V, calculate the following: a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.

1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp = 0.1 us NE 1019 ст 3 Emitter concentration Dn = 10 cm2/s NB 1016 ст -3 || Base concentration d, Nc = 1019 cm Collector concentration %3D WE 3 µm = Emitter width 1.5 ит %— base-collector junction W = Metallurgical base width, i.e. the distance between base-emitter junction and A = 10-5 cm2 = Cross-sectional area %3D If VCB = 0 V and VEB = 0.6 V, calculate the following: a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.