Q1) Design the bias of MOSFET such that the Q-point is in middle of saturation region.Assume Vtn =1v, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuitsuch that Idq =2ma and Q-point is in the middle of the saturation region.VDD = 12 VIn=2 mARpR1OvoR2wwww Necessary assumptions and values1. Vbe (on) = 0.7 V2. Vce (saturation) = 0.2 V3. Reverse saturation current = 04. MOSFET GATE leakage current = 05. Capacitors leakage current = 06. Batteries are ideal

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1) Design the bias of MOSFET such that the Q-point is in middle of saturation region. ssume Vtn =lv, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit ch that Idq =2ma and Q-point is in the middle of the saturation region. VDD = 12 V Rp In=2 mA ovo Cc R2 ww

1) Design the bias of MOSFET such that the Q-point is in middle of saturation region. ssume Vtn =lv, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit ch that Idq =2ma and Q-point is in the middle of the saturation region. VDD = 12 V Rp In=2 mA ovo Cc R2 ww

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

Q1) Design the bias of MOSFET such that the Q-point is in middle of saturation region.
Assume Vtn =1v, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit
such that Idq =2ma and Q-point is in the middle of the saturation region.
VDD = 12 V
In=2 mA
Rp
R1
Ovo
R2
ww
ww

Necessary assumptions and values
1. Vbe (on) = 0.7 V
2. Vce (saturation) = 0.2 V
3. Reverse saturation current = 0
4. MOSFET GATE leakage current = 0
5. Capacitors leakage current = 0
6. Batteries are ideal

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