1. Design a CMOS inverter using 0.25um CMOS devices, such that VM=VDD/2.Assume that the NMOS and PMOS device parameters are given below andVDD=2.5V and (W/L)n=1.5.• In our generic 0.25 micron CMOS process, using theprocess parameters from table a VDD = 2.5V, and aminimum size NMOS device ((W/L), of 1.5)VTo(V)y(V0.5) VDSAT (V)k'(A/V2)(V-1)NMOS0.430.40.63115 x 10-60.06PMOS-0.4-0.4-0.8-30 x 10-6-0.12. Estimate all static parameters of the inverter in problem 1, including VOL, VoH, VM,VIL, VIH, NML, and NMH.

1. Design a CMOS inverter using 0.25um CMOS…

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1. Design a CMOS inverter using 0.25um CMOS devices, such that VM=VDD/2.
Assume that the NMOS and PMOS device parameters are given below and
VDD=2.5V and (W/L)n=1.5.
• In our generic 0.25 micron CMOS process, using the
process parameters from table a VDD = 2.5V, and a
minimum size NMOS device ((W/L), of 1.5)
VTo(V)
y(V0.5) VDSAT (V)
k'(A/V2)
(V-1)
NMOS
0.43
0.4
0.63
115 x 10-6
0.06
PMOS
-0.4
-0.4
-0.8
-30 x 10-6
-0.1
2. Estimate all static parameters of the inverter in problem 1, including VOL, VoH, VM,
VIL, VIH, NML, and NMH.

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