1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide. 2. Describe the difference between n-type and p-type semiconductor materials. 3. Determine the static or de resistance of the commercially available diode of Fig. 1.15 at a forward current of 4 mA. Revanse-hias region, (V₂0V, 0 mA) FIG. 1.15 Silicon semiconductor diode characteristics

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1. Sketch the atomic structure of copper and discuss why it is a good conductor and how
its structure is different from that of germanium, silicon, and gallium arsenide.
2. Describe the difference between n -type and p-type semiconductor materials.
3. Determine the static or de resistance of the commercially available diode of Fig. 1.15
at a forward current of 4 mA.
-10
Reverse-hias regian,
(V₂<0V.₂)
4A)
20
Eq. (LIP
10 pA
40 pA
50 pa
:
*
.
19
03 0.5 (17
Actud commercially
available unit
No-bias
(VOV.J-0mA)
Defined polarity and
dinction for graph
Vo
Forward-hias region
V0V, 10 mA)
FIG. 1.15
Silicon semiconducir diode characteristics.
V (1)
Transcribed Image Text:1. Sketch the atomic structure of copper and discuss why it is a good conductor and how its structure is different from that of germanium, silicon, and gallium arsenide. 2. Describe the difference between n -type and p-type semiconductor materials. 3. Determine the static or de resistance of the commercially available diode of Fig. 1.15 at a forward current of 4 mA. -10 Reverse-hias regian, (V₂<0V.₂) 4A) 20 Eq. (LIP 10 pA 40 pA 50 pa : * . 19 03 0.5 (17 Actud commercially available unit No-bias (VOV.J-0mA) Defined polarity and dinction for graph Vo Forward-hias region V0V, 10 mA) FIG. 1.15 Silicon semiconducir diode characteristics. V (1)
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