10. Carrier Distribution at Equilibrium, Part 4 Repeat the above problem for the case when, Ec - EF = 0. Answers within 5% error will be considered correct. No answer X Incorrect The answer you gave is not a number.
10. Carrier Distribution at Equilibrium, Part 4 Repeat the above problem for the case when, Ec - EF = 0. Answers within 5% error will be considered correct. No answer X Incorrect The answer you gave is not a number.
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9. Carrier Distribution at Equilibrium, Part 3
The equilibrium electron concentration is given by the product of density of states and probability function, n(E) =
ge(E)F(E) whereg.(E) and F(E) are the conduction band density of states and Fermi-Dirac probability function,
respectively
Using the full expression of Fermi-Dirac function, calculate the energy relative to the conduction band edge, E - E, at
which the electron concentration becomes maximum. This semiconductor has a bandgap of 1.124 ev and the
temperature is 300 K. Further assume that the Fermi level, EF is located precisely at the middle of the bandgap, i.e.
Ec - EF = . Answers within 5% error will be considered correct.
.01295
Correct
10. Carrier Distribution at Equilibrium, Part 4
Repeat the above problem for the case when, Ec - EF = 0.
Answers within 5% error will be considered correct.
No answer
X Incorrect
The answer you gave is not a number.
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