3-2) similar to Sze & Lee prob. 3-7A one-sided p*- n Si junction at 300 K is doped with N4= 1019 cm. Choose values of Np and junction areasuch that the junction capacitance C;=0.6 pF at VR=5.0 V. (Be sure to properly account for the built-in voltage.)2 Create PDFCombine Files2 Edit PDF3-3) similar Sze & Lee prob. 3-12Export PDFp-n junction has Np= 2x107 cm, NA= 1015 cm³ , and tn = tp = 106 s, and a device area of2x10 cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverseAn ideal siliconEU Organize Pagescurrents at ± 0.7 V.Prepare FormComment3-4) Sze & Lee prob. 3-16For a silicon p*- n one-sided abrupt junction with ND= 1015 cm³, find the depletion layer width at breakdown.If the n-region is reduce to a 5 um thickness, calculate the breakdown voltage and compare your result withFig. 27.Scan & OCRProtectA More ToolsAccess more tools and enhanced functionalitiesENG1:50 PMpe here to search22%70°F Partly sunnyO G 4xUS9/24/2021

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Answered: 3-2) similar to Sze & Lee prob. 3-7 A…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Given the following circuit with VDD = 5 V, R = 2.6 k, then the current Iis: Use the CVD model for the diode, with VD= 0.65 V. V DD I a. 0.001673 A O b. 0 A O c. 1.673077 A O d. 1.923077 A e. 0.001923 A R + VD -
The converter below: diodes are ideal; L is large that ide is constant at Ide. S, S2 S3S4 İdc Va ia L Ve i 3R S5 S6A S, S8 1) Draw the waveform of i, ih, iç and ig. Vb Vc Vd -Vm 2) Determine the maximum voltage stress and maximum current stress of the diode S2.
An Si abrupt p-n junction is doped with N,-10" cm" on p-side and N, - 5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 um (b) 0.00227 um (c) 0.227 um (d) 0.00455 um
A single-phase bridge type full-wave uncontrolled rectifier is connected to a voltage source and has an RL load at its output. The RL load satisfies the (L/ R) >T condition. In this case, the output current of the rectifier is 10 A pure direct current. Voltage source impedance consists of inductance only and its value is 3 mH. The function of the voltage source Vs (t) below are given. Vs (t) = 311sin (2n50t) V Note: T=0.02s is the period value of the voltage source. R and L values do not matt er in solving the problem. a. What is the value of the overlap angle in radians? b. Find the effective value of the output voltage.
Given the circuit design for a Zener diode regulator in the previous question, what is the maximum power that will be dissipated by the Rs resistor? You are told that the source voltage Vs varies from 6 V to 11 V, the load current il varies between 2 mA and 45 mA, and the diode is an ideal 3 V Zener diode. You will need to recalculate the maximum allowable resistance Rs with your new values, as part of this question. Please enter your answer to 3 significant figures, and in Watts.
The circuit below has a variable voltage vin as its input. We are interested in Vout as a function of Vin. In other words, if we vary the value of the voltage source vin, what will be the effect on the voltage Vout? The steps below will help you to investigate this question, and your answers will form the basis for a new design. Assume that the diode can be sufficiently modelled as simple diode with forward voltage of 0.7 V (you do not need Shockley's equation). Vin 100Ω M Vf = 0.7 V 2 V V out
Question 1 3V K V₁ K №₂ 3V 5v 2k 2K 1 All the diodes are ideal V₂ (V) www %= ? Here V₁ and V2₂ are two squaoce wares, and time is follows: the change with (v) 5k as time (s) time (s) vo(t), that is, the output voltage Vo changes as a function. of time. Clearly label the voltage levels and time in stances. Hint: Diode AND gate → min, OR gate max. 2 4 10 12. Draw the output voltage waveform how
The built-in voltage for a Si p-n junction was determined with th following inputs. Arrange your own design or by any other mean possible to compute the built-in Voltage for a Germanium p- junction. NA = 10¹5 cm-3 N₂ = 10¹7 cm-³ Assume ni = 10¹⁰ cm -3 " and KT/q = 0.026V
a) Design a clamper circuit so that for the input waveform V,(t) as given in Figure 4(a), the output waveform V,(t) as shown in Figure 4(b) can be produced. You shall use ideal diode as part of your circuit design and provide the analysis of your design procedure with the aid of the simplified equivalent circuits. V(t) 10v- t2 t3 t4 t5 -10V (a) V.(t) 15V t1 to t3 t4 t5 -5V (b) Figure 4
For the circuit shown in find: (i) the output voltage (ii) the current through Zener diode (Given: Zener diode break down voltage Vz=5.6V) 2002 1-2022 9V 80092 4 7-82190-2023/0 190-023/04/01-2221762157-87190-2023.040
A single phase bridge type full wave uncontrolled rectifier is connected to a voltage source and has an RL load at its output. The RL load satisfies the (L / R) >> T condition. In this case, the output current of the rectifier is 10 A pure direct current. Voltage source impedance consists of inductance only and its value is 3 mH. The function of the voltage source Vs (t) below Re given. V,) = 311sin(2750r)V| Note: T= 0.02s is the period value of the voltage source. R and L values do not matter in solving the problem. A; What is the value of the overlap angle in radians? B; Find the effective value of the output voltage
Explain five (5) applications of the hall effects With the aid of a diagram, explain how a P-N Junction is form. iii. State five (5) application of PN Junction, and explain the property of the PN junction that make those application possible. Explain what carrier mobility is and elaborate on the factors that influence carrier mobility. A 80 V rms is stepped down to 18V rms by a transformer. The output from the transformer is rectified using a half wave rectifier circuit and connected to a 47.5 Ω load resistor. Draw a circuit diagram of this arrangement and the waveform at each stage. Calculate the following about the circuit in Figure 2.1 (If silicon diodes are employed in the rectification); the peak value of the output voltage considering the drop across each diode, the average voltage, iii. The current through the load resistor, The current diode, The frequency of the output signal, Calculate the efficiency of the full wave rectifier expressed in percentage. vii. Sketch…

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