-3 junction diode has the following parameters: ND = 102²2 m-³, = 0.02 m² /V.s, T₁=T₁=1 μs, A=1mm². NA = = 5x1024 -3 m Hn = 0.05 m²/V.s, 9 Obtain the applied voltage at a forward current of 1 mA at 300 °K. Assume n; = 1.5x10¹6 m-3. A silicon p-n

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A silicon p-n
junction diode has the following parameters: ND = 1022 m-³,
NA = 5x1024 m-3, n = 0.05 m²/V.s, Hp = 0.02 m² /V.s, T₁=Tp=1μs, A=1mm².
Obtain the applied voltage at a forward current of 1 mA at 300 °K. Assume n₁ = 1.5×10¹6 m-³3.
Transcribed Image Text:A silicon p-n junction diode has the following parameters: ND = 1022 m-³, NA = 5x1024 m-3, n = 0.05 m²/V.s, Hp = 0.02 m² /V.s, T₁=Tp=1μs, A=1mm². Obtain the applied voltage at a forward current of 1 mA at 300 °K. Assume n₁ = 1.5×10¹6 m-³3.
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