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3. A silicon p-n junction has energy of C.B. and V.B. are 0.9 eV, 0.1 eV respectively at 200 °K. the hole and electron mobility, resistivity are 0.16 m²/V.s, 0.36 m²/V.s, 0.0025 2.m and 0.005 2.m. the electric field is 2x10²8 V/m, m'. =0.8m, m',=0.5 m,, and = , =10 us, find: 1.The Built in voltage. 2. The drift currents. 3.Electron and hole diffusion length.

3. A silicon p-n junction has energy of C.B. and V.B. are 0.9 eV, 0.1 eV respectively at 200 °K. the hole and electron mobility, resistivity are 0.16 m²/V.s, 0.36 m²/V.s, 0.0025 2.m and 0.005 2.m. the electric field is 2x10²8 V/m, m'. =0.8m, m',=0.5 m,, and = , =10 us, find: 1.The Built in voltage. 2. The drift currents. 3.Electron and hole diffusion length.

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3. A silicon p-n junction has energy of C.B. and V.B. are 0.9 eV, 0.1 eV respectively at 200 °K. the hole and electron mobility, resistivity are 0.16 m²/V.s, 0.36 m²/V.s, 0.0025 N.m and 0.005 N.m. the electric field is 2×10 V/m, m'. =0.8mo, m=0.5 m,, and = 4 =10 us, find: 1.The Built in voltage. 2. The drift currents. 3.Electron and hole diffusion length.
Transcribed Image Text:3. A silicon p-n junction has energy of C.B. and V.B. are 0.9 eV, 0.1 eV respectively at 200 °K. the hole and electron mobility, resistivity are 0.16 m²/V.s, 0.36 m²/V.s, 0.0025 N.m and 0.005 N.m. the electric field is 2×10 V/m, m'. =0.8mo, m=0.5 m,, and = 4 =10 us, find: 1.The Built in voltage. 2. The drift currents. 3.Electron and hole diffusion length.
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