3.) Discuss the basic operation of a photodetector and an LED. Does each device rely on generation or recombination of electron pairs? If it's generation, explain what happens to the pair after they are created. If it's recombination, explain where the electron/holes originated and what happens to them after they recombine.

3.) Discuss the basic operation of a photodetector and an LED. Does each device rely on generation or recombination of electron pairs? If it's generation, explain what happens to the pair after they are created. If it's recombination, explain where the electron/holes originated and what happens to them after they recombine.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter30: Dc Motors

Section: Chapter Questions

Problem 6RQ: What is CEMF?

See similar textbooks

Similar questions

1. What are the main components that make up a photoresist? 2. What is a two-component resist? What are the two components? 3. What does the concept of dose involve? 4. What effect does the dose have on the molecular weight of a negativeresist? (Does it cause it to decrease or increase?5. Identify one problem that can arise when positive resist is applied to athermally grown oxide wafer (silicon substrate). How can this problembe resolved?
1- What is the appropriate display type (common anode/common cathode) that must be used with 7447 display decoder?Why?2- We would like to limit the current in the LED segments to 10mA. Assuming that the turn-on voltage for the LED’s is 1.7v, what is the proper value of the resistors to be connected between the 7447 decoder and the 7-segment display?3- Assume that the resistors provided in the lab are 220Ω. What would the current flowing into the LED’s be?4- Design a decade counter circuit using the 7490 counter, the 7447 decoder, and a 7-segment display. Show the pin numbers on the IC’s in your design
How would you compare the carrier recombination lifetime at a metal-semiconductor interface in comparison to the recombination lifetime at the bulk crystal ? And explain a differencin or similarity.
What are the main components that make up a photoresist? 2. What is a two-component resist? What are the two components? 3. What does the concept of dose involve? 4. What effect does the dose have on the molecular weight of a negativeresist? (Does it cause it to decrease or increase?) 5. Identify one problem that can arise when positive resist is applied to athermally grown oxide wafer (silicon substrate). How can this problembe resolved?
Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
Estimate the amount of free electrons and holes in a N-doped Silicon wafer a) at room temperature with 1014 cm-3 doping level, and b) at 650K with 1015 cm-3 doping level
Explain the circuit operation of positive and biased clipper circuit with neat sketch.
a) Calculate the intrinsic Fermi level (Ei - EV) of a semiconductor in units of (eV). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: GaAs Temperature: 258 (K)
what is semiconductor pn junction device whose region of operation is limited to the reversed bias region? a. Led b. pn junction c. photodiode d. schottky barrier diode
Discuss the use of any environmentally harmful material during the fabrication of devices using the selected semiconductor (Gallium Indium Arsenide). Also, discuss any harm caused to the environment through the disposal of devices made with the selected semiconductor (Gallium Indium Arsenide).
Problem 8. You are given a MOSCap consisting of a W metal electrode, SiO2 as an oxide, and p-type Si as the doped semiconductor. If you apply 0 V to the gate and +5V to the p-type Si body, what mode is the operating region of the MOSCap and what carrier do you expect to see at the interface of the oxide and p-type Si interface?
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.