3. Find no and Po, and locate the Fermi level. Draw the energy band diagram. a. b. Silicon is doped with ND = 2 × 1016 cm³. A new batch of silicon is doped with boron to NA = 8 × 1014 cm³.
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- What is the unit of measurement for the strength of a capacitor? microamp microtorque microfarad microwattWhich of the following is not a requirement for an electric circuit? a. a source b. a path c. a load d. a signal lightA capacitor uses air as a dielectric and has a capacitance of 3 F. A dielectric material is inserted between the plates without changing the spacing, and the capacitance becomes 15 F. What is the dielectric constant of this material?
- What is the value of p0 if the Fermi energy in silicon at T=300K is 0.22 eV above the valence band energy?Draw the energy band diagrams, showing Ec, Ev, EF, and Et, for the following; assum ing all impurities are ionized, a) Intrinsic silicon at 300K. b) Silicon doped with 101 7 boron atoms c m - 3 at 300K.4 - The state with energy 57 meV above Fermi energy has an occupancy probability of 0.080. If P is the probability of occupation of a state with energy 0.057 eV below the Fermi level, it is possible to state that: ( ) It is not possible to determine P without knowing the temperature. ( ) P = 0.880( ) P = 0.920( ) P = 0.950( ) P = 0.910
- The vertical deflection of the electron beam in a CRO is provided by,Surface barrier diodes have a lower noise figure in high frequencies True False The capacitance of the Varactor diode increases with an increase in reverse bias voltage True False The dark current is a current that will exist with no applied illumination True False The lifetime of LCDs is longer than that of LEDs True False The liquid-crystal display (LCD) has the distinct advantage of having a lower power requirement than the LED (light emitting diodes) True FalseExample/ Fermi Deric probability of le:vel above of Fermi level by 0.3 ev is 1% find Temperature in Degree.
- A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I=26mA.given the mean life time of hole is 20uS at T-300KAt T=300K, Determine the probability that an energy state is occupied by an electron if the state is above the Fermi level by kT; Determine the probability that the energy state is empty if the state is below the Fermi level by kT;