5x1016 cm and Na The doping concentrations of p-n junction are Na 1.5x10 cm, and the minority carrier lifetimes are Tno = 2 x 107 s and tno = 8x 10*s. The electron mobility is 965 cm?/V-s and the holes mobility is 386 cm/V-s and The cross sectional area is A = 5x 10* cm. Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x = (built-in voltage), (d) the electron current at x = Xn for Va = 0.8 Vbi-, and (e) the electron current at x = xXn + (1/2) L, (diffusion length) for Va = 0.8 Vbi- || Xn for Va = 0.8 Vbi

5x1016 cm and Na The doping concentrations of p-n junction are Na 1.5x10 cm, and the minority carrier lifetimes are Tno = 2 x 107 s and tno = 8x 10s. The electron mobility is 965 cm?/V-s and the holes mobility is 386 cm/V-s and The cross sectional area is A = 5x 10 cm. Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x = (built-in voltage), (d) the electron current at x = Xn for Va = 0.8 Vbi-, and (e) the electron current at x = xXn + (1/2) L, (diffusion length) for Va = 0.8 Vbi- || Xn for Va = 0.8 Vbi

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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