6. Use this information to answer Question 6-8: Consider a one-sided step pn junction made of silicon in which the doping density in the n-side is much greater than that in the p- side, ND >> NA. This junction is under a reverse bias of 10 V. If the doping density, NA, in the p- side is doubled, what would be the percent change in junction capacitance, C 2:38 PM ✓

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3
3
56
5. Find the doping density, ND in the
n- side in unit of cm-³
2:36 PM ✓
6. Use this information to answer
Question 6-8: Consider a one-sided
step pn junction made of silicon in
which the doping density in the n-side
is much greater than that in the p-
side, ND >> NA. This junction is under
a reverse bias of 10 V. If the doping
density, NA, in the p- side is doubled,
what would be the percent change in
junction capacitance, C
2:38 PM ✔
Transcribed Image Text:3 3 56 5. Find the doping density, ND in the n- side in unit of cm-³ 2:36 PM ✓ 6. Use this information to answer Question 6-8: Consider a one-sided step pn junction made of silicon in which the doping density in the n-side is much greater than that in the p- side, ND >> NA. This junction is under a reverse bias of 10 V. If the doping density, NA, in the p- side is doubled, what would be the percent change in junction capacitance, C 2:38 PM ✔
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