7. For a common-emitter amplifier, Rc= 1.0 k2, RE = 390 2, r'.- 15 2, and Bac=75. Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is: (a) 66.7 (b) 2.56 (c) 2.47 (d) 75 9. In a certain emitter-follower circuit, the current gain is 50. The power gain is approximately: (c) I (a) 50AV (b) 50 (d) answers (a) and (b) 10. In a Darlington pair configuration, each transistor has an ac beta of 125. If RE is 560 Q, the input resistance is: (a) 560 N (b) 70 kN (c) 8.75 MQ (d) 140 kN

7. For a common-emitter amplifier, Rc= 1.0 k2, RE = 390 2, r'.- 15 2, and Bac=75. Assuming that Rg is completely bypassed at the operating frequency, the voltage gain is: (a) 66.7 (b) 2.56 (c) 2.47 (d) 75 9. In a certain emitter-follower circuit, the current gain is 50. The power gain is approximately: (c) I (a) 50AV (b) 50 (d) answers (a) and (b) 10. In a Darlington pair configuration, each transistor has an ac beta of 125. If RE is 560 Q, the input resistance is: (a) 560 N (b) 70 kN (c) 8.75 MQ (d) 140 kN

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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4) By drawing the small signal model of the circuit given below, we can determine the total voltage and current gain values of the circuit, without the bypass capacitor on and without the bypass capacitor. Calculate separately for the two cases as it will be in the circuit (connected to the emitter end of the transistor). (β = 100, rS = 600 Ω, R1 = 27 KΩ, R2 = 4.7 KΩ, RC = 3.3 KΩ, RE = 680 Ω, RL= 15 KΩ, VCC = 10 V)
Design a Single-Stage Common Emitter Class A Amplifier Specifications:Voltage Divider Bias Circuit Supply: Any value from 10Vdc to 24VdcLoad: 1kΩVoltage Gain: Any value from 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50mVp-pTransistor: Si, β = 75 • Base-Collector capacitance = 8pF • Base-Emitter Capacitance = 25pF a) compute for the biasing resistances.b) determine the dc transistor terminal voltages and transistor currents.
In the common-emitter amplifier circuit shown in the figure, Vcc=9V, R1=27kΩ, R2=15kΩ, RE=1.2kΩ and RC=2.2kΩ. The transistor has β=100.a-) If Rsig=10kΩ and RL=2kΩ, calculate the IE value of the amplifier.b-) For small signal analysis of the transistor, find the value of Rin by deriving the π-modelc-) Calculate vo/vsig and io/ii.
The common-emitter amplifier given in the figure in the circuit, Vcc=9V, R1=27kΩ, R2=15kΩ, RE=1.2kΩ and RC=2.2kΩ. Transistor β=100 has value. a-) If it has values of Rsig=10kΩ and RL=2kΩ Calculate the IE of the amplifier. b-) For small signal analysis of transistor Find the value of Rin by deriving the π-model c-) Calculate vo/vsig and io/ii.
In the circuit given in the figure, what is the voltage gain (Av) of the circuit when = 100, r0 = 40 kΩ, RB = 360 kΩ, RC = 3.3 kΩ, RE = 220 Ω, Rs = 15 kΩ and RL = 166 kΩ?NOTE-1: The output impedance r0 of the transistor will be taken into the calculations.NOTE-2: Capacitors are negligible at mid-band frequency.
In the circuit in the figure, VGSQ = 6.8 V, IDQ = 2.4 mA, VGS(Th) = 3.3 V, k = 0.4x10-3 A/V2, RD = 5.6 kΩ, RF = 2.2 MΩ and rd = 25 kΩ. Accordingly, when a RL = 0.1 kΩ load is connected to the output of the circuit, what will be the voltage gain of the circuit? NOTE: MOSFET output resistance must be taken into account in rd calculations
SOLVE NUMBER 2 .1. Solve the output voltage if the gain is 24 db with aninput of 5mV.? 2. Assume a load resistor, RL of 2.2kΩs and a supply voltage of 24v. Calculate the Collector current (Ic) flowing through the load resistor when the transistor is switched fully "ON", assume Vce = 0, & β = 100. Also find the value of the Emitter resistor, Re with a voltage drop of 1.3v across it, R1, R2, and Ib. Assume also a value of 9 times Ib flowing through the resistor R2, while 10 times Ib flowing through R1.
Consider the common-source amplifier shown in Figure P11.50. The NMOS transistor has KP=50 μA/V2, L=5 μm, W=500 μm, Vto=1 V and rd=∞.a. Determine the values of IDQ, VDSQ and gm. b. Compute the voltage gain, input resistance, and output resistance, assuming that the coupling capacitors are short circuits for the ac signal. Repeat Problem P11.50 for an NMOS transistor having KP=50 μA/V2, W=600 μm, L=20 μm, Vto=2 V and rd=∞. Compare the gain with that attained in Problem P11.50.
A. Design a fixed bias-transistor circuit using VBB = VCC = 10 V for a Q-point of IC = 5 mA and VCE_ 4 V. Assume βDC = 100.The design involves finding RB and RC. B. 4. Design an emitter bias network at Q-point ICQ = ½ ICsat and VCEQ = ½ VCC. Use VCC = 20 V, ICsat = 10 mA, β = 120, and RC = 4RE
Current and impedance levels of push-pull RF amplifier. Solid-state RF power amplifiers that provide more than 50 W or so must deal with very large currents, because the typical silicon RF BJT or PET cannot with-stand a DC collector voltage higher than about 40V. (Newer devices using materials such as silicon carbide can exceed this voltage limitation and provide greater power for the same current level.) Suppose a push-pull RF amplifier using a DC collector voltage of 36 V must provide a total peak RF output power of 200W. Typically, the AC "swing" (peak-to-peak AC excursion) of voltage at the collectors cannot exceed twice the DC power-supply voltage. (a) If each of the two devices in the push-pull amplifier delivers IOOW and has a peak-to-peak voltage of (2 x 36) = 72 V across its output terminals , what is the peak current I at the collector of each device, assuming . "d C(PK) smus01 al voltage and current? (b) At this current IC<PK >' how much series inductance L at a…
A common emitter amplifier has a 15V power supply. If we design for a 6.5V swing (peak voltage) at the output voltage what will the DC voltage drop be across RE? Group of answer choices 2V 10V 6.5 5V
Consider a voltage-divider configuration of n-channel enhancement-type MOSFET where R1 = 12 MΩ, R2 = 7 MΩ, RD = 3 kΩ, RS = 1 kΩ. The MOSFET has a threshold voltage VGS(Th) = 3V, and one example point on the transfer characteristics curve is VGS(on) = 6V, ID(on) = 5 mA. Determine VGSQ, IDQ, Vs, VD, VDS assuming VDD = ( 80 ÷ 10 ) +20 V