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A Ale.35GA0.65AS/GaAs/Alo.35GA0.654s pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of Tr 96 ns. At 300 K the LED is biased with a voltage V= 2 V and the injected current at the biased voltage is I= 66 mA. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1

A Ale.35GA0.65AS/GaAs/Alo.35GA0.654s pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of Tr 96 ns. At 300 K the LED is biased with a voltage V= 2 V and the injected current at the biased voltage is I= 66 mA. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1

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Ob.4.522e-6 A Oc 2.720e-5 A O d. 1.071e-4 A O e. 9.010e-6 A A Alo.35Gao.65As/Ga.As/Alo.35GA0.65As pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of Tr-96 ns. At 300 K the LED is biased with a voltage V= 2 V and the injected current at the biased voltage is I= 66 mA. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1 You are asked by your supervisor in a company to design a Alo.„Ga0.6As/GaAs/Alo Ga0.6As pn" DH surface emitting LED to be operated at 300 K emitting in air, given the following design parameters and information: 1. The semiconductors from which you will fabricate the LED is totally defect free.
Transcribed Image Text:Ob.4.522e-6 A Oc 2.720e-5 A O d. 1.071e-4 A O e. 9.010e-6 A A Alo.35Gao.65As/Ga.As/Alo.35GA0.65As pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of Tr-96 ns. At 300 K the LED is biased with a voltage V= 2 V and the injected current at the biased voltage is I= 66 mA. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1 You are asked by your supervisor in a company to design a Alo.„Ga0.6As/GaAs/Alo Ga0.6As pn" DH surface emitting LED to be operated at 300 K emitting in air, given the following design parameters and information: 1. The semiconductors from which you will fabricate the LED is totally defect free.
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