A Alo 35Gao.65As/G.AS/Alo35Ga0.65AS pn* DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of t-96 ns. At 300 K the LED is biased with a voltage V = 2 V and the injected current at the biased voltage is I= 66 m4. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 e. 4.904e21 s-1

A Alo 35Gao.65As/G.AS/Alo35Ga0.65AS pn* DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of t-96 ns. At 300 K the LED is biased with a voltage V = 2 V and the injected current at the biased voltage is I= 66 m4. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 e. 4.904e21 s-1