A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s'. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 1010 cm³³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is

A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s'. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 1010 cm³³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is