A JFET has three terminals, namely اخترأحد الخیارات a. emitter, base, collector b. none of the above C. cathode, anode, grid d. source, gate, drain
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A: Given, Input voltage, Vin=50 mV. Output voltage, Vout=700 V.
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Q: A- For the given circuit of Si transistor, B=200, findVcE. 5V 1KO 1MO 2KO
A: Need to find Vce
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A: As per Bartleby guidelines we are allowed to solve only one question,please ask the rest again.
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Q: For the given circuit of Si transistor, B=200, findVce- 5V 1KO 2K2
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A: We are authorized to answer only 3 subparts at a time since you have not mentioned which part you…
Q: In the transistor shown below choose the correct terminal names Terminal 1 Terminal 2 o- Terminal 3…
A: BJT containe three terminals, namely Collector Emitter Base
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A: The solution is given below answer is option d
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Q: Q1. The set of independent of voltages are recoded as :50.8, 50.5, 50.2, 50.1, 50.3,50.6. Calculate:…
A: We are authorized to answer only 1 question and only 3 subparts at a time since you have not…
Q: 47) Determine the emitter voltage of transistor 1 ( a. 5. 468 V b. 4.568 V c. 8.654 V d. 6.845 V
A: We need to find out voltage for given circuit
Q: o 20 V 1.1 ka 330 ka 91 k2
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A: The problem is from biasing of BJT.
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A: Conditions: 1.Saturation (ON) VE<VBVC<VB 2.Reverse Active VC<VB<VE 3.Cut-off (off)…
Q: Q-1: A- For the given circuit of Si transistor, ß=200, findVce. 5V 1KO 2KO
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Q: Figure 1 shows a voltage-divider biased transistor circuit. If βDC=200, Determine (i) Collector…
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Q: Calculate the Resistance , if the RTD temperature is 2928.5 oC and Sensitivity is 8.4 oC/ohm
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Q: 12 V 2.2 ka 220 k. B= 60 ,=40kQ
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Q: Q1: A) used as a preamplifier for a microphone. Finds the voltage gain if Vin =40mv and Vo=30v Vo
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Q: 3. For the emitter bias network of Figure 3, determine: (a) IB. (b) Ic. (c) VCE. (d) Vc. (e) Ve. (f)…
A: Apply KVL in the loop as shown in the figure-- 20-IB430 k-VBE-IE1 k=020-IB430 k-0.7-1+βIB1 k=0IB430…
Q: QUESTION 3 a) In the operation of bipolar junction transistor, there are three transistor currents…
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- Find VBE, ic, ib, ie assuming Beta is 50. .In a silicon transistor, the ICBO leakage current is 25nA and the beta value is 70. If the ambient temperature rise is 80 °C, calculate the ICBO. (Leakage current doubles for every 60 °C rise.)a)10.5 mAb) 13.1 mAc)12.5 mAd)18.3 mAe)11.8 mAFROM THE SOLVE DIAGRAM FOR A COMBINATIONAL ELEMENT ACCORDING TO THE NOMENCLATURE FOR IT, WITH SAT DATA VCC= 18V, VBE= .47V, VBB = 9V, VCE= .92 V ICSATMAX= 290mA. β= 55 RE= 3.3 OHMS WHAT TOLERANCES DOES THE USE OF CORRESPONDING STANDARDIZED VALUES FOR RB YIELD?
- Are the following statements correct or wrong? Justify your answer. GTO requires very low current applied to its gate to be turn off. IGBT is a voltage driven device. BJT is more efficient than IGBT in high power applications. Thyristors are used only for low voltage, low current applications. MOSFETs are used for high frequency applications.D-MOSFET: lVtl= 2 V, Idss =10 mA, Is=1.6 mA, rd=14 K, RL=2 K. Calculate the dc drain-to-source voltage. Please write your answer as a V and don’t use units in the answer. Please use one digit after the dot.4. Are the following statements correct or wrong? Justify your answer. (a) GTO requires very low current applied to its gate to be turn off. (b) IGBT is a voltage driven device. (c) BJT is more efficient than IGBT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETs are used for high frequency applications.
- (Hand by written. ) i need full solving for this qu for electronic circuits moduleCalculate the approximate value for IDQ in the given circuitSix 100Wp crystalline PV modules, each with an open circuit voltage (Voc) of 30V, are connected in series in a string. What would be the total open circuit voltage (Voc) of the string of modules? And what would be the total Wp of the string? 180V, 600Wp 180V, 100Wp 30V, 600Wp 30V, 100Wp The distance from a combiner box to a PV array junction box is 4 m. The voltage drop of the used cable on this distance is 0.5 V. The current is 8.0 A. What is the power loss on this distance? 16 W 32 A 4 W 2 W A PV system has a rated capacity of 10 kWp. The overall efficiency of this PV system is 75% . The average daily irradiance at the site is 4 kWh/m²/day. What is the expected average daily energy output of this system? 3 kWh 30 kWh 7.5 kWh 40 kWh